SCHEMBL1028530

SCHEMBL1028530

CS(=O)(=O)OC1CC(=O)NC1=O

nearest known ligand 0.39

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
MAP3K14 Q99558 1/20 0.39
CRBN Q96SW2 6/20 0.37
DDB1 Q16531 5/20 0.36
GAA P10253 1/20 0.33
TSHR P16473 1/20 0.33
NPC1 O15118 1/20 0.32
CYP19A1 P11511 1/20 0.31
GLA P06280 1/20 0.30
LMNA P02545 1/20 0.30
MAPT P10636 1/20 0.30
PKM P14618 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1027078 0.81 CRBN (0.50) CRBNDDB1
SCHEMBL114367 0.81 NPC1 (0.36) MAP3K14CRBNDDB1GAATSHR
SCHEMBL193688 0.80 MAP3K14 (0.39) MAP3K14CRBNDDB1CYP19A1LMNA
SCHEMBL114517 0.79 GLA (0.37) MAP3K14CRBNDDB1GAATSHR
SCHEMBL17065483 0.77 NPC1 (0.37) MAP3K14CRBNDDB1TSHRNPC1
SCHEMBL5855515 0.76 MAP3K14 (0.39) MAP3K14CRBNDDB1
SCHEMBL3381432 0.76 MAP3K14 (0.35) MAP3K14
SCHEMBL1034864 0.74
SCHEMBL8348991 0.73 MAP3K14 (0.48) MAP3K14CRBNDDB1GAATSHR
SCHEMBL10754755 0.73 MAP3K14 (0.48) MAP3K14CRBNDDB1GAATSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2018160726-A1 LOW DIELECTRIC CONSTANT POROUS EPOXY-BASED DIELECTRIC GEORGIA TECH RESEARCH CORPORATION (US) 2018-09-07 WO disclosed
US-9436084-B2 Positive-working photoresist composition for thick film formation TOKYO OHKA KOGYO CO., LTD. (JP) 2016-09-06 US disclosed
EP-2510398-A2 COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY Rohm and Haas Electronic Materials LLC (US) 2012-10-17 EP disclosed
WO-2011072307-A2 COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. (US) 2011-06-16 WO disclosed
EP-2273968-A1 COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS THE PROCTER & GAMBLE COMPANY (US) 2011-01-19 EP disclosed
EP-1861751-B1 POSITIVE-WORKING PHOTORESIST COMPOSITION FOR THICK FILM FORMATION TOKYO OHKA KOGYO CO LTD (JP) 2010-11-24 EP disclosed
WO-2009140076-A1 COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS THE PROCTER & GAMBLE COMPANY (US) 2009-11-19 WO disclosed
US-20080026321-A1 Positive-working photoresist composition for thick film formation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-01-31 US disclosed
EP-1861751-A1 POSITIVE-WORKING PHOTORESIST COMPOSITION FOR THICK FILM FORMATION TOKYO OHKA KOGYO CO., LTD. (JP) 2007-12-05 EP disclosed
WO-2006101250-A1 POSITIVE-WORKING PHOTORESIST COMPOSITION FOR THICK FILM FORMATION TOKYO OHKA KOGYO CO., LTD. (JP) 2006-09-28 WO disclosed
US-6541179-B2 A chemically amplified, positive resist comprising a sulfonium salt compound as photoacid generator, a base resin containing a monomer having alicyclic structure, and a solvent; heat treatment and exposure SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-04-01 US disclosed
US-20010033990-A1 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed