⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28207169 | 0.88 | SLC6A3 (0.32) | — | |
| SCHEMBL28010936 | 0.85 | — | — | |
| SCHEMBL4302505 | 0.77 | — | — | |
| SCHEMBL15283365 | 0.77 | — | — | |
| SCHEMBL3381889 | 0.76 | ALDH1A1 (0.30) | — | |
| SCHEMBL1526871 | 0.75 | — | — | |
| SCHEMBL7908819 | 0.74 | ALDH1A1 (0.36) | — | |
| SCHEMBL13719266 | 0.74 | — | — | |
| SCHEMBL1011271 | 0.74 | SHBG (0.30) | — | |
| SCHEMBL15375792 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10025188-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-20170322492-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| US-20160320705-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-20160097978-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-04-07 | — | — | US | disclosed |
| US-20150160556-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2015-06-11 | — | — | US | disclosed |
| US-9046769-B2 | Pattern-forming method, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-8993223-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2015-03-31 | — | — | US | disclosed |
| US-20150050600-A9 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2015-02-19 | — | — | US | disclosed |
| CN-103135355-B | Photocurable polysiloxane composition, protective film and element having protective film | CHI MEI CORP | 2015-02-11 | — | — | CN | disclosed |
| US-8927201-B2 | Multilayer resist process pattern-forming method and multilayer resist process inorganic film-forming composition | JSR CORPORATION (JP) | 2015-01-06 | — | — | US | disclosed |
| US-20140371466-A1 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2014-12-18 | — | — | US | disclosed |
| US-8859191-B2 | Pattern-forming method, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2014-10-14 | — | — | US | disclosed |
| US-20140134544-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2014-05-15 | — | — | US | disclosed |
| US-8669042-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2014-03-11 | — | — | US | disclosed |
| US-20140030660-A1 | MULTILAYER RESIST PROCESS PATTERN-FORMING METHOD AND MULTILAYER RESIST PROCESS INORGANIC FILM-FORMING COMPOSITION | JSR CORPORATION (JP) | 2014-01-30 | — | — | US | disclosed |
| EP-2615497-A1 | RESIST PATTERN FORMING METHOD | JSR Corporation (JP) | 2013-07-17 | — | — | EP | disclosed |
| US-20120285929-A1 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2012-11-15 | — | — | US | disclosed |
| US-20120183908-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2012-07-19 | — | — | US | disclosed |