Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FFAR3 | O14843 | 3/20 | 0.74 |
| ▸ | HDAC3 | O15379 | 3/20 | 0.74 |
| ▸ | HDAC1 | Q13547 | 3/20 | 0.74 |
| ▸ | HDAC2 | Q92769 | 3/20 | 0.74 |
| ▸ | HDAC8 | Q9BY41 | 3/20 | 0.74 |
| ▸ | CA1 | P00915 | 3/20 | 0.50 |
| ▸ | CA2 | P00918 | 2/20 | 0.48 |
| ▸ | CES2 | O00748 | 1/20 | 0.48 |
| ▸ | CES1 | P23141 | 1/20 | 0.48 |
| ▸ | NFKB1 | P19838 | 2/20 | 0.47 |
| ▸ | GPR84 | Q9NQS5 | 1/20 | 0.45 |
| ▸ | FABP3 | P05413 | 2/20 | 0.39 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.39 |
| ▸ | TSHR | P16473 | 1/20 | 0.39 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Butyric Acid SCHEMBL7613310 | 0.95 | FFAR3 (0.67) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Adipic Acid SCHEMBL8437395 | 0.84 | CA1 (0.56) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Butyric Acid SCHEMBL1035581 | 0.83 | FFAR3 (0.82) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Butyric Acid SCHEMBL1330878 | 0.83 | — | — | |
| Butyric Acid SCHEMBL9800297 | 0.83 | FFAR3 (0.93) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Butyric Acid SCHEMBL2587931 | 0.83 | FFAR3 (0.93) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Butyric Acid SCHEMBL11419652 | 0.83 | FFAR3 (0.93) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Butyric Acid SCHEMBL10908702 | 0.83 | FFAR3 (0.93) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Butyric Acid SCHEMBL4292004 | 0.83 | FFAR3 (1.00) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Butyric Acid SCHEMBL11441641 | 0.83 | FFAR3 (0.93) | FFAR3HDAC3HDAC1HDAC2HDAC8 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 170 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112752786-B | Polycarbonate compositions with improved oxidative stability and methods for preparing same | SABIC环球技术有限责任公司 | 2023-06-09 | — | — | CN | claimed |
| US-7122613-B1 | Method for the production of polycarbonates | GENERAL ELECTRIC COMPANY (US) | 2006-10-17 | — | — | US | claimed |
| EP-1578840-A1 | METHOD FOR THE PRODUCTION OF POLYCARBONATES | General Electric Company (US) | 2005-09-28 | — | — | EP | claimed |
| WO-2004060963-A1 | METHOD FOR THE PRODUCTION OF POLYCARBONATES | GENERAL ELECTRIC COMPANY (US) | 2004-07-22 | — | — | WO | claimed |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| US-20250340697-A1 | METHOD FOR THE MANUFACTURE OF POLYCARBONATE | SABIC GLOBAL TECHNOLOGIES BV (NL) | 2025-11-06 | — | — | US | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-6228973-B1 | REACTING A DIHYDRIC PHENOL AND A DIHYDROCARBYL CARBONATE BY SOLVENT-FREE MELT POLYMERIZATION CATALYZED BY A TETRAORGANOPHOSPHONIUM SALT AND A LOWER CONCENTRATION OF ALKALI/ALKALINE EARTH COMPOUND; BY-PRODUCT INHIBITION | GENERAL ELECTRIC COMPANY | 2001-05-08 | — | — | US | disclosed |
| EP-1069146-A1 | POLYCARBONATE AND OPTICAL MATERIAL | Idemitsu Petrochemical Co., Ltd. (JP) | 2001-01-17 | — | — | EP | disclosed |
| EP-1035150-A1 | COPOLYCARBONATE AND PROCESS FOR PRODUCING THE SAME | IDEMITSU PETROCHEMICAL CO., LTD. (JP) | 2000-09-13 | — | — | EP | disclosed |
| EP-0702044-B1 | Polycarbonate redistribution method | GEN ELECTRIC (US) | 2000-05-03 | — | — | EP | disclosed |
| EP-0702044-A1 | Polycarbonate redistribution method | GENERAL ELECTRIC COMPANY (US) | 1996-03-20 | — | — | EP | disclosed |
| US-5459226-A | Melt extrusion in presence of tetraorganophosphonium carboxylate salt | GENERAL ELECTRIC COMPANY (US) | 1995-10-17 | — | — | US | disclosed |
| EP-0671428-A1 | Method for making polycarbonates | GENERAL ELECTRIC COMPANY (US) | 1995-09-13 | — | — | EP | disclosed |
| US-5412061-A | Polycarbonate melt condensation synthesis using a tetraorganophosphonium carboxylate salt catalyst | GENERAL ELECTRIC COMPANY (US) | 1995-05-02 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | FFAR3 1313/4885HDAC3 2829/4885HDAC1 1279/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | FFAR3 2087/4885HDAC3 4451/4885HDAC1 4383/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | FFAR3 110/4885HDAC3 2256/4885HDAC1 497/4885 |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SMURF1, OSR1, SIK1 | FFAR3 2578/4885HDAC3 3742/4885HDAC1 1298/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.