SCHEMBL1044951

SCHEMBL1044951

COc1ccc(-c2nc(C(Br)(Br)Br)nc(C(Br)(Br)Br)n2)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CLK4 Q9HAZ1 1/20 0.50
MAPT P10636 4/20 0.48
KDM4E B2RXH2 1/20 0.48
TP53 P04637 1/20 0.48
CYP1A1 P04798 1/20 0.44
CYP1A2 P05177 1/20 0.44
CYP1B1 Q16678 1/20 0.44
NPC1 O15118 6/20 0.44
RAB9A P51151 4/20 0.44
SMN1; SMN2 Q16637 2/20 0.44
NPSR1 Q6W5P4 1/20 0.44
S1PR1 P21453 1/20 0.44
NR1H4 Q96RI1 1/20 0.44
XDH P47989 1/20 0.43
ADORA3 P0DMS8 2/20 0.43
SYK P43405 1/20 0.43
MEN1 O00255 1/20 0.42
KMT2A Q03164 1/20 0.42
CA12 O43570 1/20 0.42
CA1 P00915 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22129825 0.83 CLK4 (0.48) CLK4MAPTKDM4ETP53CYP1A1
SCHEMBL36116 0.83 CLK4 (0.48) CLK4MAPTKDM4ETP53CYP1A1
SCHEMBL27587282 0.82 CLK4 (0.49) CLK4MAPTKDM4ETP53NPC1
SCHEMBL10068859 0.81 CLK4 (0.47) CLK4MAPTKDM4ETP53CYP1A1
SCHEMBL338452 0.81 CLK4 (0.64) CLK4MAPTKDM4ETP53CYP1A1
Ethylene SCHEMBL22497430 0.80 CLK4 (0.46) CLK4MAPTKDM4ETP53CYP1A1
SCHEMBL326391 0.79 CLK4 (0.48) CLK4MAPTKDM4ETP53CYP1A1
SCHEMBL15896952 0.79 CLK4 (0.61) CLK4MAPTKDM4ETP53CYP1A1
SCHEMBL2876553 0.79 CLK4 (0.61) CLK4MAPTKDM4ETP53CYP1A1
SCHEMBL9849715 0.78 CYP1A2 (0.40) MAPTTP53CYP1A1CYP1A2CYP1B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 122 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119668028-A Negative photoresist composition, application thereof and imaging method 福建泓光半导体材料有限公司 2025-03-21 CN claimed
EP-0621508-B1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO LTD (JP) 1996-09-25 EP claimed
US-5494777-A Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1996-02-27 US claimed
EP-0621508-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1994-10-26 EP claimed
CN-122072436-A Negative photosensitive resin composition, cured film, and resist film DIC株式会社 2026-05-22 CN disclosed
CN-119668028-A Negative photoresist composition, application thereof and imaging method 福建泓光半导体材料有限公司 2025-03-21 CN disclosed
CN-119575759-A Positive photosensitive resin composition, photosensitive film, resist underlayer film, resist permanent film, and method for producing film DIC株式会社 2025-03-07 CN disclosed
CN-113348188-B Phenolic hydroxyl group-containing resin, photosensitive composition, resist film, curable composition, and cured product DIC株式会社 2024-05-10 CN disclosed
CN-118011733-A Positive photosensitive resin composition, resist film, resist underlayer film, and resist permanent film DIC株式会社 2024-05-10 CN disclosed
CN-117075428-A Negative photosensitive resin composition DIC株式会社 2023-11-17 CN disclosed
US-11746255-B2 Hard-mask composition IRRESISTIBLE MATERIALS LTD (GB) 2023-09-05 US disclosed
CN-110959138-B Resist material DIC株式会社 2023-06-30 CN disclosed
US-5494777-A Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1996-02-27 US disclosed
EP-0621509-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1994-10-26 EP disclosed
EP-0621508-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1994-10-26 EP disclosed
US-5292614-A Bis(triaminotriazine) MITSUBISHI KASEI CORPORATION (JP) 1994-03-08 US disclosed
US-5286600-A Negative photosensitive composition and method for forming a resist pattern by means thereof MITSUBISHI KASEI CORPORATION (JP) 1994-02-15 US disclosed
EP-0458325-A1 Negative photosensitive composition and method for forming a resist pattern Mitsubishi Chemical Corporation (JP) 1991-11-27 EP disclosed
US-4845011-A BASIFIED ACRIDINE COMPOUND, A TRIAZINE OR QUINAZOLINONE COMPOUND HOECHST CELANESE CORPORATION (US) 1989-07-04 US disclosed
EP-0313007-A2 Mixture polymerised by visible light HOECHST CELANESE CORPORATION (US) 1989-04-26 EP disclosed