SCHEMBL1045321

SCHEMBL1045321

CC(C)N([SiH3])[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL80807 0.74
SCHEMBL6553040 0.74
SCHEMBL12236595 0.65
SCHEMBL31715324 0.62
SCHEMBL2562820 0.60
SCHEMBL3751552 0.59 ALDH1A1 (0.30)
SCHEMBL22407 0.59 ALDH1A1 (0.30)
SCHEMBL20212036 0.59 ALDH1A1 (0.30)
SCHEMBL20586 0.59
Fluoride SCHEMBL634472 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 108 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250313953-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2025-10-09 US claimed
US-20250297360-A1 SUBSTRATE PROCESSING METHOD ASM IP HOLDING B.V. (NL) 2025-09-25 US claimed
US-12392038-B2 Thin-film deposition method and system ASM IP HOLDING B.V. (NL) 2025-08-19 US claimed
US-20250253145-A1 SUBSTRATE PROCESSING METHOD ASM IP HOLDING B.V. (NL) 2025-08-07 US claimed
US-12378667-B2 Methods and systems for forming doped silicon nitride films ASM IP HOLDING B.V. (NL) 2025-08-05 US claimed
US-20230279031-A1 N-ALKYL SUBSTITUTED CYCLIC AND OLIGOMERIC PERHYDRIDOSILAZANES, METHODS OF PREPARATION THEREOF, AND SILICON NITRIDE FILMS FORMED THEREFROM GELEST, INC. 2023-09-07 US claimed
US-20230126516-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2023-04-27 US claimed
US-20230098270-A1 PRECURSORS FOR HIGH-TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS LAM RESEARCH CORPORATION 2023-03-30 US claimed
US-20230089397-A1 AIR GAP FORMING METHOD AND SELECTIVE DEPOSITION METHOD ASM IP HOLDING B.V. (NL) 2023-03-23 US claimed
CN-115807217-A Air gap forming method and selective deposition method ASM IP私人控股有限公司 2023-03-17 CN claimed
CN-114622183-A Method for preparing silicon oxide film 湖南红太阳光电科技有限公司 2022-06-14 CN claimed
EP-3274354-B1 N-ALKYL SUBSTITUTED CYCLIC AND OLIGOMERIC PERHYDRIDOSILAZANES, METHODS OF PREPARATION THEREOF, AND SILICON NITRIDE FILMS FORMED THEREFROM GELEST TECH INC (US) 2019-07-03 EP claimed
US-9887080-B2 Method of forming SiOCN material layer and method of fabricating semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-02-06 US claimed
EP-3274354-A1 N-ALKYL SUBSTITUTED CYCLIC AND OLIGOMERIC PERHYDRIDOSILAZANES, METHODS OF PREPARATION THEREOF, AND SILICON NITRIDE FILMS FORMED THEREFROM Gelest Technologies Inc. (US) 2018-01-31 EP claimed
US-20170186603-A1 METHOD OF FORMING SiOCN MATERIAL LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-06-29 US claimed
US-20160280724-A1 N-ALKYL SUBSTITUTED CYCLIC AND OLIGOMERIC PERHYDRIDOSILAZANES, METHODS OF PREPARATION THEREOF, AND SILICON NITRIDE FILMS FORMED THEREFROM GELEST, INC. 2016-09-29 US claimed
WO-2016153929-A1 N-ALKYL SUBSTITUTED CYCLIC AND OLIGOMERIC PERHYDRIDOSILAZANES, METHODS OF PREPARATION THEREOF, AND SILICON NITRIDE FILMS FORMED THEREFROM GELEST TECHNOLOGIES, INC. (US) 2016-09-29 WO claimed
US-20260092360-A1 CYCLICAL DEPOSITION METHOD INCLUDING TREATMENT STEP AND APPARATUS FOR SAME ASM IP HOLDING BV (NL) 2026-04-02 US disclosed
EP-1724373-A1 Precursors for cvd silicon carbo-nitride films Air Products and Chemicals, Inc. (US) 2006-11-22 EP disclosed
US-20060258173-A1 Precursors for CVD silicon carbo-nitride films VERSUM MATERIALS US, LLC 2006-11-16 US disclosed