SCHEMBL80807

SCHEMBL80807

CC(C)N([SiH3])C(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1047729 0.79
SCHEMBL1045321 0.74
SCHEMBL6553040 0.70
SCHEMBL22407 0.56 ALDH1A1 (0.30)
SCHEMBL27977434 0.56 ALDH1A1 (0.30)
SCHEMBL3751552 0.56 ALDH1A1 (0.30)
SCHEMBL20586 0.56
SCHEMBL20212036 0.56 ALDH1A1 (0.30)
Water SCHEMBL2864553 0.53
Ammonia Solution, Strong SCHEMBL2883129 0.53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2653 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4748968-A1 METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS Hansol Chemical Co., Ltd (KR) 2026-05-27 EP claimed
CN-114695264-B Semiconductor memory structure and method for filling conductive material in contact hole INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES (CN) 2026-05-26 CN claimed
US-12635185-B2 Thin film transistor substrate and display apparatus comprising the same LG DISPLAY CO., LTD. (KR) 2026-05-19 US claimed
US-20260136855-A1 METHOD OF SELECTIVE DEPOSITION ON SUBSTRATE, SUBSTRATE FABRICATED THEREBY, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE COMPRISING SAME SAMSUNG ELECTRONICS CO LTD (KR) 2026-05-14 US claimed
US-12628578-B2 Substrate processing method ASM IP HOLDING B.V. (NL) 2026-05-12 US claimed
EP-4719364-A1 PREPARATION OF PHARMACEUTICAL COMPOSITIONS USING SUPERCYCLE VAPOR PHASE DEPOSITION OF INORGANIC OXIDES Applied Materials, Inc. (US) 2026-04-08 EP claimed
US-12559838-B2 Sealing structure and manufacturing method therefor IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (KR) 2026-02-24 US claimed
US-12554191-B2 Pellicle membrane and method of forming the same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-02-17 US claimed
US-20260041086-A1 PROCESS FOR PREPARING COATED ORGANIC PARTICLES BASF SE (DE) 2026-02-12 US claimed
US-12546000-B2 Substrate processing method ASM IP HOLDING B.V. (NL) 2026-02-10 US claimed
US-20080242116-A1 Method for forming strained silicon nitride films and a device containing such films TOKYO ELECTRON LIMITED (JP) 2008-10-02 US claimed
US-20080213479-A1 SiCN film formation method and apparatus TOKYO ELECTRON LIMITED 2008-09-04 US claimed
EP-1939323-A1 Cyclic chemical vapor deposition of metal-silicon containing films Air Products and Chemicals, Inc. (US) 2008-07-02 EP claimed
US-20080142046-A1 Thermal F2 etch process for cleaning CVD chambers AIR PRODUCTS AND CHEMICALS, INC. 2008-06-19 US claimed
EP-1932941-A1 Thermal etch process for cleaning CVD chambers Air Products and Chemicals, Inc. (US) 2008-06-18 EP claimed
US-20080081470-A1 Method for forming strained silicon nitride films and a device containing such films TOKYO ELECTRON LIMITED (JP) 2008-04-03 US claimed
US-20080058541-A1 Stabilization of nitrogen-containing and oxygen-containing organosilanes using weakly basic ion-exchange resins VERSUM MATERIALS US, LLC 2008-03-06 US claimed
EP-1894934-A1 Stabilization of Nitrogen-Containing and Oxygen-Containing Organosilanes Using Weakly Basic Ion-Exchange Resins Air Products and Chemicals, Inc. (US) 2008-03-05 EP claimed
US-20070275166-A1 Process for producing silicon oxide films from organoaminosilane precursors VERSUM MATERIALS US, LLC 2007-11-29 US claimed
EP-1860690-A2 Process for producing silicon oxide films from organoaminosilane precursors Air Products and Chemicals, Inc. (US) 2007-11-28 EP claimed