SCHEMBL6553040

SCHEMBL6553040

CC(C)N(C)[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1045321 0.74
SCHEMBL80807 0.70
SCHEMBL20586 0.67
SCHEMBL27977434 0.67 ALDH1A1 (0.30)
SCHEMBL35296 0.65
SCHEMBL43239 0.63
Hydrochloric Acid SCHEMBL15233791 0.63
Iodide SCHEMBL30960110 0.63
Ammonia Solution, Strong SCHEMBL2883129 0.63
SCHEMBL16904036 0.63

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 101 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116003079-A Method for producing autoclaved concrete slab by using magnesium ore slag 江门市俞嘉科技有限公司 2023-04-25 CN claimed
EP-3535436-B1 PRECURSORS AND FLOWABLE CVD METHODS FOR MAKING LOW-K FILMS TO FILL SURFACE FEATURES VERSUM MAT US LLC (US) 2021-05-12 EP claimed
US-10580644-B2 Method and apparatus for selective film deposition using a cyclic treatment TOKYO ELECTRON LIMITED (JP) 2020-03-03 US claimed
US-9153597-B2 Methods of manufacturing a three-dimensional semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2015-10-06 US claimed
US-20130078776-A1 Methods of Manufacturing a Three-Dimensional Semiconductor Device SAMSUNG ELECTRONICS CO., LTD. 2013-03-28 US claimed
CN-101587304-B Pattern transferring method SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION (CN) 2011-11-30 CN claimed
CN-101484984-B Post-treatment method of amorphous carbon film TOKYO ELECTRON LTD 2010-12-15 CN claimed
CN-101640170-A Photoetching method capable of reducing width of exposure pattern SEMICONDUCTOR MFG INT SHANGHAI 2010-02-03 CN claimed
CN-101587304-A Pattern transferring method SEMICONDUCTOR MFG INT BEIJING (CN) 2009-11-25 CN claimed
CN-101484984-A Post-treatment method of amorphous carbon film TOKYO ELECTRON LTD (JP) 2009-07-15 CN claimed
CN-116003079-B Method for producing autoclaved concrete slab by using magnesium ore slag 江门市俞嘉科技有限公司 2024-08-20 CN disclosed
US-11735413-B2 Precursors and flowable CVD methods for making low-k films to fill surface features VERSUM MATERIALS US, LLC (US) 2023-08-22 US disclosed
CN-116003079-A Method for producing autoclaved concrete slab by using magnesium ore slag 江门市俞嘉科技有限公司 2023-04-25 CN disclosed
CN-114388427-A Method and system for forming silicon nitride on sidewalls of features ASM IP私人控股有限公司 2022-04-22 CN disclosed
EP-3390410-B1 METHODS OF MAKING HIGH PURITY TRISILYLAMINE NATA SEMICONDUCTOR MAT CO LTD (CN) 2022-02-02 EP disclosed
EP-1059314-A1 A resist composition Wako Pure Chemical Industries, Ltd. (JP) 2000-12-13 EP disclosed
CN-1252788-A Process for preparing pharmaceutical compounds LILLY CO ELI (US) 2000-05-10 CN disclosed
US-5990345-A Process for preparation of ethylenically unsaturated isocyanates NOVARTIS AG (CH) 1999-11-23 US disclosed
CN-1140452-A Arthropodicidal tetrahydropyrimidines DU PONT (US) 1997-01-15 CN disclosed
CN-1132504-A Inhibitors of beta-amyloid production MURRILL MEDICINES CO (US) 1996-10-02 CN disclosed