Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC6A2 | P23975 | 1/20 | 0.48 |
| ▸ | TAAR1 | Q96RJ0 | 1/20 | 0.48 |
| ▸ | LMNA | P02545 | 2/20 | 0.45 |
| ▸ | CYP2D6 | P10635 | 2/20 | 0.45 |
| ▸ | TRPA1 | O75762 | 1/20 | 0.40 |
| ▸ | CYP2C19 | P33261 | 3/20 | 0.38 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.38 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.38 |
| ▸ | CTSL | P07711 | 1/20 | 0.36 |
| ▸ | CTSS | P25774 | 1/20 | 0.36 |
| ▸ | CTSK | P43235 | 1/20 | 0.36 |
| ▸ | TP53 | P04637 | 1/20 | 0.36 |
| ▸ | PPARG | P37231 | 1/20 | 0.36 |
| ▸ | PPARA | Q07869 | 1/20 | 0.36 |
| ▸ | MMP8 | P22894 | 1/20 | 0.36 |
| ▸ | HIF1A | Q16665 | 2/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.35 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.35 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28750748 | 0.80 | SLC6A2 (0.45) | SLC6A2TAAR1LMNACYP2D6TRPA1 | |
| SCHEMBL1572105 | 0.79 | SLC6A2 (0.64) | SLC6A2TAAR1LMNACYP2D6TRPA1 | |
| SCHEMBL5969348 | 0.79 | SLC6A2 (0.48) | SLC6A2TAAR1LMNACYP2D6TRPA1 | |
| SCHEMBL28098349 | 0.79 | SLC6A2 (0.48) | SLC6A2TAAR1LMNACYP2D6TRPA1 | |
| SCHEMBL3338285 | 0.78 | SLC6A2 (0.41) | SLC6A2TAAR1LMNACYP2D6TRPA1 | |
| SCHEMBL28927873 | 0.76 | SLC6A2 (0.41) | SLC6A2TAAR1LMNACYP2D6TRPA1 | |
| SCHEMBL1501496 | 0.76 | SLC6A2 (0.41) | SLC6A2TAAR1LMNACYP2D6TRPA1 | |
| SCHEMBL28548162 | 0.75 | SLC6A2 (0.58) | SLC6A2TAAR1LMNACYP2D6TRPA1 | |
| SCHEMBL28101753 | 0.75 | SLC6A2 (0.44) | SLC6A2TAAR1LMNACYP2D6TRPA1 | |
| SCHEMBL313697 | 0.74 | SLC6A2 (0.52) | SLC6A2TAAR1LMNACYP2D6TRPA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 146 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2628745-B1 | Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-03-25 | — | — | EP | claimed |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| EP-4660703-A2 | METAL-CONTAINING FILM PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-12-10 | — | — | EP | disclosed |
| US-20250372377-A1 | METAL-CONTAINING FILM PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| EP-4592752-A2 | COMPOSITION FOR FORMING METAL-CONTAINING FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| EP-1845132-B1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHINETSU CHEMICAL CO (JP) | 2009-01-21 | — | — | EP | disclosed |
| US-20090011372-A1 | SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-01-08 | — | — | US | disclosed |
| EP-2011830-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-01-07 | — | — | EP | disclosed |
| EP-2011829-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-01-07 | — | — | EP | disclosed |
| EP-1867681-B1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHINETSU CHEMICAL CO (JP) | 2008-12-31 | — | — | EP | disclosed |
| US-20080274432-A1 | SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080026322-A1 | Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| EP-1867681-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-12-19 | — | — | EP | disclosed |
| EP-1845132-A2 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shinetsu Chemical Co., Ltd. (JP) | 2007-10-17 | — | — | EP | disclosed |
| US-20070238300-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. | 2007-10-11 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | SLC6A2 893/4885TAAR1 608/4885LMNA 2784/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | SLC6A2 2693/4885TAAR1 2558/4885LMNA 755/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | SLC6A2 1865/4885TAAR1 244/4885LMNA 2488/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.