SCHEMBL1053905

SCHEMBL1053905

CCCCCC(N)C(=O)OCc1ccccc1[N+](=O)[O-]

nearest known ligand 0.46

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
MAOB P27338 1/20 0.45
L3MBTL1 Q9Y468 1/20 0.44
KMT2A Q03164 4/20 0.43
MEN1 O00255 2/20 0.43
POLB P06746 1/20 0.42
CYP2C19 P33261 1/20 0.42
TP53 P04637 1/20 0.42
ALDH1A1 P00352 4/20 0.40
HTT P42858 1/20 0.40
GAA P10253 1/20 0.40
HPGD P15428 1/20 0.40
KDM4E B2RXH2 1/20 0.39
TSHR P16473 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3612596 0.99 L3MBTL1 (0.46) MAOBL3MBTL1KMT2AMEN1POLB
SCHEMBL29175065 0.89 MAOB (0.43) MAOBL3MBTL1KMT2AMEN1POLB
SCHEMBL910460 0.88 MAOB (0.43) MAOBL3MBTL1KMT2AMEN1POLB
SCHEMBL29674293 0.88 L3MBTL1 (0.57) MAOBL3MBTL1KMT2AMEN1POLB
SCHEMBL1056790 0.86 L3MBTL1 (0.42) L3MBTL1KMT2AMEN1TP53ALDH1A1
SCHEMBL1057910 0.86 KMT2A (0.51) MAOBL3MBTL1KMT2AMEN1POLB
SCHEMBL12869702 0.81 MAOB (0.48) MAOBKMT2AMEN1POLBCYP2C19
SCHEMBL2780596 0.81 MAOB (0.47) MAOBL3MBTL1KMT2AMEN1POLB
SCHEMBL7897984 0.81 MAOB (0.47) MAOBL3MBTL1KMT2AMEN1POLB
SCHEMBL6865970 0.80 MAOB (0.52) MAOBKMT2AMEN1POLBCYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240030030-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-25 US disclosed
US-20240021429-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-18 US disclosed
US-10162260-B2 Photosensitive resin composition, protective film, and liquid crystal display element CHI MEI CORPORATION (TW) 2018-12-25 US disclosed
US-20180356725-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2018-12-13 US disclosed
US-20170168390-A1 PHOTOSENSITIVE RESIN COMPOSITION, PROTECTIVE FILM, AND LIQUID CRYSTAL DISPLAY ELEMENT CHI MEI CORPORATION (TW) 2017-06-15 US disclosed
EP-1662322-B1 Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film TORAY INDUSTRIES (JP) 2017-01-11 EP disclosed
US-20160299376-A1 LIQUID CRYSTAL DISPLAY DEVICE, RADIATION-SENSITIVE RESIN COMPOSITION, INTERLAYER INSULATING FILM, METHOD FOR PRODUCING INTERLAYER INSULATING FILM, AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE JSR CORPORATION (JP) 2016-10-13 US disclosed
US-9091920-B2 Photosensitive siloxane resin composition MERCK PATENT GMBH (DE) 2015-07-28 US disclosed
US-20140335448-A1 PHOTOSENSITIVE SILOXANE RESIN COMPOSITION AZ ELECTRONIC MATERIALS USA CORP. (US) 2014-11-13 US disclosed
US-8486604-B2 Positive-type radiation-sensitive composition, cured film, interlayer insulating film, method of forming interlayer insulating film, display device, and siloxane polymer for forming interlayer insulating film JSR CORPORATION (JP) 2013-07-16 US disclosed
US-20110008730-A1 POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, CURED FILM, INTERLAYER INSULATING FILM, METHOD OF FORMING INTERLAYER INSULATING FILM, DISPLAY DEVICE, AND SILOXANE POLYMER FOR FORMING INTERLAYER INSULATING FILM JSR CORPORATION (JP) 2011-01-13 US disclosed
US-7374856-B2 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2008-05-20 US disclosed
US-20060115766-A1 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2006-06-01 US disclosed
EP-1662322-A2 Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film TORAY INDUSTRIES, INC. (JP) 2006-05-31 EP disclosed
US-6180320-B1 Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2001-01-30 US disclosed