SCHEMBL1053908

SCHEMBL1053908

O=C(O)N(Cc1ccccc1[N+](=O)[O-])C1CCCCC1

nearest known ligand 0.58

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.58
KMT2A Q03164 3/20 0.58
MEN1 O00255 2/20 0.58
KDM4E B2RXH2 1/20 0.58
L3MBTL1 Q9Y468 1/20 0.48
SNCA P37840 2/20 0.46
AGER Q15109 3/20 0.44
MTNR1A P48039 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1427866 0.88 ALDH1A1 (0.48) ALDH1A1KMT2AMEN1KDM4EL3MBTL1
SCHEMBL28840600 0.87 ALDH1A1 (0.50) ALDH1A1KMT2AMEN1KDM4EL3MBTL1
SCHEMBL2310221 0.85 MGLL (0.47) ALDH1A1KMT2AMEN1KDM4E
SCHEMBL3705822 0.84 ALDH1A1 (0.47) ALDH1A1KMT2AMEN1KDM4EL3MBTL1
SCHEMBL29458899 0.84 KMT2A (0.44) ALDH1A1KMT2AMEN1KDM4EL3MBTL1
SCHEMBL9200469 0.82 KMT2A (0.49) ALDH1A1KMT2AMEN1KDM4EL3MBTL1
SCHEMBL9200471 0.82 KMT2A (0.49) ALDH1A1KMT2AMEN1KDM4EL3MBTL1
SCHEMBL8895608 0.80 KDM4E (0.57) ALDH1A1KMT2AMEN1KDM4EL3MBTL1
SCHEMBL29874435 0.80 KDM4E (0.57) ALDH1A1KMT2AMEN1KDM4EL3MBTL1
Hydrochloric Acid SCHEMBL8816016 0.78 KDM4E (0.56) ALDH1A1KMT2AMEN1KDM4EL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 152 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8367190-B2 At low temperature, fast hardening composition for preparing protecting film, protecting film prepared therefrom, and substrate comprising the same LG CHEM, LTD. (KR) 2013-02-05 US claimed
US-20100080973-A1 LOW TEMPERATURE, FAST HARDENING COMPOSITION FOR PREPARING PROTECTING FILM, PROTECTING FILM PREPARED THEREFROM, AND SUBSTRATE COMPRISING THE SAME LG CHEM, LTD. (KR) 2010-04-01 US claimed
WO-2008035890-A9 AT LOW TEMPERATURE, FAST HARDENING COMPOSITION FOR PREPARING PROTECTING FILM, PROTECTING FILM PREPARED THEREFROM, AND SUBSTRATE COMPRISING THE SAME LG CHEMICAL LTD (KR) 2009-04-23 WO claimed
WO-2008035890-A1 AT LOW TEMPERATURE, FAST HARDENING COMPOSITION FOR PREPARING PROTECTING FILM, PROTECTING FILM PREPARED THEREFROM, AND SUBSTRATE COMPRISING THE SAME LG CHEM, LTD. (KR) 2008-03-27 WO claimed
US-6743572-B2 OVERCOATING WITH ZONES OF FILM FORMING POLYMER; HEATING PHOTORESISTS; DEVELOPMENT INFINEON TECHNOLOGIES AG (DE) 2004-06-01 US claimed
US-20020187436-A1 Method for structuring a photoresist layer POLARIS INNOVATIONS LIMITED (IE) 2002-12-12 US claimed
US-12607931-B2 Photosensitive transfer material, light shielding material, LED array, and electronic apparatus FUJIFILM CORPORATION (JP) 2026-04-21 US disclosed
WO-2025099025-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST FILM USING THE SAME MERCK PATENT GMBH (DE) 2025-05-15 WO disclosed
WO-2025013746-A1 PATTERN-FORMING COMPOSITION 日産化学株式会社 2025-01-16 WO disclosed
CN-118047765-A Dielectric material 默克专利股份有限公司 2024-05-17 CN disclosed
US-20240049386-A1 LAMINATE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-02-08 US disclosed
WO-2024024864-A1 PHOTOSENSITIVE TRANSFER MATERIAL, METHOD FOR MANUFACTURING SAME, METHOD FOR MANUFACTURING RESIN PATTERN, AND METHOD FOR MANUFACTURING CIRCUIT WIRING 富士フイルム株式会社 2024-02-01 WO disclosed
US-20240030030-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-25 US disclosed
WO-2008035890-A1 AT LOW TEMPERATURE, FAST HARDENING COMPOSITION FOR PREPARING PROTECTING FILM, PROTECTING FILM PREPARED THEREFROM, AND SUBSTRATE COMPRISING THE SAME LG CHEM, LTD. (KR) 2008-03-27 WO disclosed
US-20070185263-A1 COMPOSITION FOR FORMING SILICA-BASED COATING WITH A LOW REFRACTIVE INDEX TOKYO OHKA KOGYO CO., LTD. (JP) 2007-08-09 US disclosed
US-20060292488-A1 Composition for formation of antireflection film, and antireflection film in which the same is used TOKYO OHKA KOGYO CO., LTD. (JP) 2006-12-28 US disclosed
US-20050130082-A1 Developing solution for photoresist ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. 2005-06-16 US disclosed
US-20050112503-A1 Developing solution for photoresist ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. 2005-05-26 US disclosed
US-6743572-B2 OVERCOATING WITH ZONES OF FILM FORMING POLYMER; HEATING PHOTORESISTS; DEVELOPMENT INFINEON TECHNOLOGIES AG (DE) 2004-06-01 US disclosed
US-20020187436-A1 Method for structuring a photoresist layer POLARIS INNOVATIONS LIMITED (IE) 2002-12-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12607931-B2 Photosensitive transfer material, light shielding material, LED array, and electronic apparatus SETD1B, NLRP1, MAP1LC3B ALDH1A1 1082/4885KMT2A 291/4885MEN1 2743/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.