Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KAT2B | Q92831 | 2/20 | 0.37 |
| ▸ | MC4R | P32245 | 1/20 | 0.36 |
| ▸ | GPR35 | Q9HC97 | 1/20 | 0.34 |
| ▸ | CTSD | P07339 | 1/20 | 0.34 |
| ▸ | BCHE | P06276 | 1/20 | 0.33 |
| ▸ | ACHE | P22303 | 1/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.33 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.32 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16924651 | 0.90 | GPR35 (0.38) | KAT2BGPR35CTSDL3MBTL1LMNA | |
| SCHEMBL2201162 | 0.86 | ALDH1A1 (0.36) | MC4RGPR35LMNAALDH1A1KDM4E | |
| SCHEMBL1057117 | 0.86 | MAOB (0.43) | KAT2BMC4RBCHEACHEL3MBTL1 | |
| SCHEMBL1056792 | 0.81 | KAT2B (0.40) | KAT2BGPR35CTSDL3MBTL1LMNA | |
| SCHEMBL2201246 | 0.81 | MC4R (0.37) | KAT2BMC4RALDH1A1 | |
| SCHEMBL16225602 | 0.79 | KAT2B (0.40) | KAT2BGPR35CTSDLMNAALDH1A1 | |
| SCHEMBL3612829 | 0.79 | KAT2B (0.36) | KAT2BGPR35CTSDL3MBTL1LMNA | |
| SCHEMBL2200129 | 0.79 | CYP1A2 (0.46) | KAT2BMC4RGPR35ALDH1A1KDM4E | |
| SCHEMBL2200685 | 0.79 | MC4R (0.48) | MC4RALDH1A1 | |
| SCHEMBL1057424 | 0.78 | KAT2B (0.41) | KAT2BGPR35CTSDLMNAALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240030030-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION | JSR CORPORATION (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240021429-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION | JSR CORPORATION (JP) | 2024-01-18 | — | — | US | disclosed |
| WO-2022209816-A1 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022202402-A1 | SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR株式会社 | 2022-09-29 | — | — | WO | disclosed |
| CN-108732831-B | Resin composition, substrate and element comprising same, and method for producing same | JSR株式会社 | 2022-08-16 | — | — | CN | disclosed |
| US-10162260-B2 | Photosensitive resin composition, protective film, and liquid crystal display element | CHI MEI CORPORATION (TW) | 2018-12-25 | — | — | US | disclosed |
| US-20180356725-A1 | RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2018-12-13 | — | — | US | disclosed |
| US-20170168390-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PROTECTIVE FILM, AND LIQUID CRYSTAL DISPLAY ELEMENT | CHI MEI CORPORATION (TW) | 2017-06-15 | — | — | US | disclosed |
| EP-1662322-B1 | Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film | TORAY INDUSTRIES (JP) | 2017-01-11 | — | — | EP | disclosed |
| US-20160299376-A1 | LIQUID CRYSTAL DISPLAY DEVICE, RADIATION-SENSITIVE RESIN COMPOSITION, INTERLAYER INSULATING FILM, METHOD FOR PRODUCING INTERLAYER INSULATING FILM, AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE | JSR CORPORATION (JP) | 2016-10-13 | — | — | US | disclosed |
| US-9091920-B2 | Photosensitive siloxane resin composition | MERCK PATENT GMBH (DE) | 2015-07-28 | — | — | US | disclosed |
| US-20140335448-A1 | PHOTOSENSITIVE SILOXANE RESIN COMPOSITION | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2014-11-13 | — | — | US | disclosed |
| US-8486604-B2 | Positive-type radiation-sensitive composition, cured film, interlayer insulating film, method of forming interlayer insulating film, display device, and siloxane polymer for forming interlayer insulating film | JSR CORPORATION (JP) | 2013-07-16 | — | — | US | disclosed |
| US-20110008730-A1 | POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, CURED FILM, INTERLAYER INSULATING FILM, METHOD OF FORMING INTERLAYER INSULATING FILM, DISPLAY DEVICE, AND SILOXANE POLYMER FOR FORMING INTERLAYER INSULATING FILM | JSR CORPORATION (JP) | 2011-01-13 | — | — | US | disclosed |
| US-7374856-B2 | Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film | TORAY INDUSTRIES, INC. (JP) | 2008-05-20 | — | — | US | disclosed |
| US-20060115766-A1 | Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film | TORAY INDUSTRIES, INC. (JP) | 2006-06-01 | — | — | US | disclosed |
| EP-1662322-A2 | Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film | TORAY INDUSTRIES, INC. (JP) | 2006-05-31 | — | — | EP | disclosed |
| US-6815142-B1 | Method for forming resist pattern, and overlying layer material and semiconductor device used for forming resist pattern | RENESAS TECHNOLOGY CORP. (JP) | 2004-11-09 | — | — | US | disclosed |
| US-6180320-B1 | Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 2001-01-30 | — | — | US | disclosed |