SCHEMBL1056587

SCHEMBL1056587

O=C(OCc1ccccc1[N+](=O)[O-])C1CNCCN1C(=O)OCc1ccccc1[N+](=O)[O-]

nearest known ligand 0.41

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ITGB2 P05107 1/20 0.41
ICAM1 P05362 1/20 0.41
ITGAL P20701 1/20 0.41
ALDH1A1 P00352 3/20 0.39
HTT P42858 2/20 0.39
RAB9A P51151 1/20 0.39
MAOB P27338 1/20 0.39
L3MBTL1 Q9Y468 1/20 0.39
ACHE P22303 1/20 0.38
KMT2A Q03164 1/20 0.38
MTNR1A P48039 1/20 0.37
MTNR1B P49286 1/20 0.37
SIGMAR1 Q99720 1/20 0.36
KDM4E B2RXH2 1/20 0.36
LMNA P02545 1/20 0.36
OPRM1 P35372 1/20 0.36
TACR1 P25103 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1055545 0.88 ITGB2 (0.39) ITGB2ICAM1ITGALALDH1A1L3MBTL1
SCHEMBL4674934 0.80 HTR2C (0.52) RAB9AKMT2A
SCHEMBL3612069 0.80 KDM4E (0.47) ALDH1A1HTTRAB9AMAOBL3MBTL1
SCHEMBL8436611 0.80 TDP1 (0.45) ALDH1A1RAB9AKDM4E
SCHEMBL1056588 0.76 KDM4E (0.55) ALDH1A1HTTRAB9AMAOBL3MBTL1
SCHEMBL12869939 0.74 KMT2A (0.51) ALDH1A1ACHEKMT2AKDM4ELMNA
SCHEMBL27736628 0.74 HTR2C (0.51) L3MBTL1KDM4ELMNA
SCHEMBL27757498 0.74 HTR2C (0.51) L3MBTL1KDM4ELMNA
SCHEMBL10508064 0.74 KDM4E (0.50) ALDH1A1HTTRAB9AMAOBL3MBTL1
SCHEMBL729505 0.74 KDM4E (0.50) ALDH1A1HTTRAB9AMAOBL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240030030-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-25 US disclosed
US-20240021429-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-18 US disclosed
WO-2022209816-A1 METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-10-06 WO disclosed
WO-2022202402-A1 SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-09-29 WO disclosed
CN-107077070-B Photosensitive resin composition, cured film, element provided with cured film, and method for manufacturing semiconductor device 东丽株式会社 2020-06-16 CN disclosed
US-10162260-B2 Photosensitive resin composition, protective film, and liquid crystal display element CHI MEI CORPORATION (TW) 2018-12-25 US disclosed
US-20180356725-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2018-12-13 US disclosed
US-20170168390-A1 PHOTOSENSITIVE RESIN COMPOSITION, PROTECTIVE FILM, AND LIQUID CRYSTAL DISPLAY ELEMENT CHI MEI CORPORATION (TW) 2017-06-15 US disclosed
EP-1662322-B1 Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film TORAY INDUSTRIES (JP) 2017-01-11 EP disclosed
US-20160299376-A1 LIQUID CRYSTAL DISPLAY DEVICE, RADIATION-SENSITIVE RESIN COMPOSITION, INTERLAYER INSULATING FILM, METHOD FOR PRODUCING INTERLAYER INSULATING FILM, AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE JSR CORPORATION (JP) 2016-10-13 US disclosed
US-8486604-B2 Positive-type radiation-sensitive composition, cured film, interlayer insulating film, method of forming interlayer insulating film, display device, and siloxane polymer for forming interlayer insulating film JSR CORPORATION (JP) 2013-07-16 US disclosed
US-20110008730-A1 POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, CURED FILM, INTERLAYER INSULATING FILM, METHOD OF FORMING INTERLAYER INSULATING FILM, DISPLAY DEVICE, AND SILOXANE POLYMER FOR FORMING INTERLAYER INSULATING FILM JSR CORPORATION (JP) 2011-01-13 US disclosed
US-7374856-B2 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2008-05-20 US disclosed
US-20060115766-A1 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2006-06-01 US disclosed
EP-1662322-A2 Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film TORAY INDUSTRIES, INC. (JP) 2006-05-31 EP disclosed
US-6815142-B1 Method for forming resist pattern, and overlying layer material and semiconductor device used for forming resist pattern RENESAS TECHNOLOGY CORP. (JP) 2004-11-09 US disclosed
EP-0633502-B1 PATTERN FORMING MATERIAL CLARIANT FINANCE BVI LTD (VG) 2002-03-20 EP disclosed
US-6180320-B1 Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2001-01-30 US disclosed
EP-0633502-A1 PATTERN FORMING MATERIAL HOECHST JAPAN LIMITED (JP) 1995-01-11 EP disclosed