SCHEMBL1058873

SCHEMBL1058873

Nc1ccccc1C(=O)OCc1ccccc1[N+](=O)[O-]

nearest known ligand 0.64

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ RAB9A P51151 4/20 0.64
▸ ALDH1A1 P00352 10/20 0.51
▸ HSD17B10 Q99714 7/20 0.51
▸ TSHR P16473 3/20 0.48
▸ MAOB P27338 1/20 0.47
▸ SMN1; SMN2 Q16637 3/20 0.47
▸ NPC1 O15118 3/20 0.47
▸ HPGD P15428 2/20 0.47
▸ TP53 P04637 1/20 0.47
▸ GLA P06280 1/20 0.47
▸ CYP3A4 P08684 1/20 0.47
▸ MAPK1 P28482 1/20 0.47
▸ HIF1A Q16665 1/20 0.47
▸ TDP1 Q9NUW8 1/20 0.47
▸ L3MBTL1 Q9Y468 1/20 0.47
▸ CTSD P07339 1/20 0.47
▸ KDM4E B2RXH2 2/20 0.46
▸ MEN1 O00255 2/20 0.46
▸ KMT2A Q03164 2/20 0.46
▸ NFKB1 P19838 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1057096 0.86 RAB9A (0.64) RAB9AALDH1A1HSD17B10TSHRSMN1; SMN2
SCHEMBL31346758 0.84 ALDH1A1 (0.56) RAB9AALDH1A1TSHRMAOBSMN1; SMN2
SCHEMBL8673819 0.83 ALDH1A1 (0.47) RAB9AALDH1A1TSHRMAOBSMN1; SMN2
SCHEMBL16225691 0.83 RAB9A (0.48) RAB9AALDH1A1TSHRMAOBNPC1
SCHEMBL1056771 0.83 ALDH1A1 (0.44) RAB9AALDH1A1TSHRMAOBSMN1; SMN2
SCHEMBL16343390 0.81 RAB9A (0.43) RAB9AALDH1A1TSHRMAOBSMN1; SMN2
SCHEMBL9506104 0.81 ALDH1A1 (0.47) RAB9AALDH1A1TSHRMAOBNPC1
SCHEMBL2593856 0.80 RAB9A (0.46) RAB9AALDH1A1TSHRMAOBNPC1
SCHEMBL1058199 0.80 MEN1 (0.46) RAB9AALDH1A1TSHRMAOBSMN1; SMN2
SCHEMBL16343391 0.80 MEN1 (0.46) RAB9AALDH1A1TSHRMAOBSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240030030-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-25 — — US disclosed
US-20240021429-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-18 — — US disclosed
WO-2022209816-A1 METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-10-06 — — WO disclosed
WO-2022202402-A1 SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-09-29 — — WO disclosed
US-10162260-B2 Photosensitive resin composition, protective film, and liquid crystal display element CHI MEI CORPORATION (TW) 2018-12-25 — — US disclosed
US-20180356725-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2018-12-13 — — US disclosed
US-20170168390-A1 PHOTOSENSITIVE RESIN COMPOSITION, PROTECTIVE FILM, AND LIQUID CRYSTAL DISPLAY ELEMENT CHI MEI CORPORATION (TW) 2017-06-15 — — US disclosed
EP-1662322-B1 Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film TORAY INDUSTRIES (JP) 2017-01-11 — — EP disclosed
US-20160299376-A1 LIQUID CRYSTAL DISPLAY DEVICE, RADIATION-SENSITIVE RESIN COMPOSITION, INTERLAYER INSULATING FILM, METHOD FOR PRODUCING INTERLAYER INSULATING FILM, AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE JSR CORPORATION (JP) 2016-10-13 — — US disclosed
US-20140335448-A1 PHOTOSENSITIVE SILOXANE RESIN COMPOSITION AZ ELECTRONIC MATERIALS USA CORP. (US) 2014-11-13 — — US disclosed
US-8486604-B2 Positive-type radiation-sensitive composition, cured film, interlayer insulating film, method of forming interlayer insulating film, display device, and siloxane polymer for forming interlayer insulating film JSR CORPORATION (JP) 2013-07-16 — — US disclosed
US-20110039208-A1 PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 — — US disclosed
US-20110039208-A1 PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 — — US disclosed
US-20110008730-A1 POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, CURED FILM, INTERLAYER INSULATING FILM, METHOD OF FORMING INTERLAYER INSULATING FILM, DISPLAY DEVICE, AND SILOXANE POLYMER FOR FORMING INTERLAYER INSULATING FILM JSR CORPORATION (JP) 2011-01-13 — — US disclosed
US-7374856-B2 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2008-05-20 — — US disclosed
US-20060115766-A1 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2006-06-01 — — US disclosed
EP-1662322-A2 Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film TORAY INDUSTRIES, INC. (JP) 2006-05-31 — — EP disclosed
US-6815142-B1 Method for forming resist pattern, and overlying layer material and semiconductor device used for forming resist pattern RENESAS TECHNOLOGY CORP. (JP) 2004-11-09 — — US disclosed
US-6180320-B1 Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2001-01-30 — — US disclosed
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