SCHEMBL106033

SCHEMBL106033

CCCCOCC(=O)C(CC)(CC)C(=O)O.[AlH3]

nearest known ligand 0.51

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
CES2 O00748 2/20 0.51
TSHR P16473 3/20 0.36
PLA2G4B P0C869 3/20 0.35
ALDH1A1 P00352 1/20 0.35
HDAC1 Q13547 1/20 0.35
HDAC2 Q92769 1/20 0.35
EPHX2 P34913 1/20 0.34
RECQL P46063 1/20 0.33
HCAR2 Q8TDS4 1/20 0.33
ATM Q13315 1/20 0.33
FAAH O00519 1/20 0.33
RARB P10826 1/20 0.33
CYP3A4 P08684 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28412886 0.98 CES2 (0.53) CES2TSHRPLA2G4BALDH1A1HDAC1
SCHEMBL105816 0.96 CES2 (0.51) CES2TSHRPLA2G4BALDH1A1HDAC1
SCHEMBL105782 0.96 CES2 (0.51) CES2TSHRPLA2G4BALDH1A1HDAC1
SCHEMBL109458 0.89 CES2 (0.42) CES2ALDH1A1
SCHEMBL108938 0.85 CES2 (0.42) CES2ALDH1A1
SCHEMBL107316 0.85 CES2 (0.42) CES2ALDH1A1
SCHEMBL106032 0.81 CES2 (0.50) CES2TSHRPLA2G4BALDH1A1ATM
SCHEMBL105815 0.81 CES2 (0.50) CES2TSHRPLA2G4BALDH1A1ATM
SCHEMBL6324617 0.81 CES2 (0.50) CES2TSHRPLA2G4BALDH1A1ATM
SCHEMBL105781 0.81 CES2 (0.50) CES2TSHRPLA2G4BALDH1A1ATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 75 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
US-12521919-B2 Anisotropic film and method for manufacturing anisotropic film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-13 US disclosed
CN-112526822-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2025-02-28 CN disclosed
CN-112286000-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-12-03 CN disclosed
CN-118620392-A Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-09-10 CN disclosed
US-20240286321-A1 ANISOTROPIC FILM AND METHOD FOR MANUFACTURING ANISOTROPIC FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-08-29 US disclosed
CN-114660896-B Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound 信越化学工业株式会社 2024-06-11 CN disclosed
US-11733609-B2 Silicon-containing underlayers ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-08-22 US disclosed
CN-111458980-B Composition for forming underlayer film of silicon-containing resist and method for forming pattern 信越化学工业株式会社 2023-08-11 CN disclosed
US-20100285407-A1 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-11 US disclosed
US-20100147334-A1 Coated-type silicon-containing film stripping process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-17 US disclosed
EP-2196858-A1 Coated-type silicon-containing film stripping process Shin-Etsu Chemical Co., Ltd. (JP) 2010-06-16 EP disclosed
US-20100086872-A1 Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
EP-2172808-A1 Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed
EP-1876201-B1 Use of a resin composition for sealing an LED element SHINETSU CHEMICAL CO (JP) 2009-08-26 EP disclosed
US-20090136869-A1 METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-28 US disclosed
EP-2063319-A1 Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-05-27 EP disclosed
US-20080008867-A1 RESIN COMPOSITION FOR SEALING OPTICAL DEVICE AND CURED PRODUCT THEREOF SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-10 US disclosed
EP-1876201-A1 Resin composition for sealing optical device and cured product thereof Shin-Etsu Chemical Co., Ltd. (JP) 2008-01-09 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR CES2 2647/4885TSHR 446/4885PLA2G4B 3748/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.