Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.37 |
| ▸ | CA1 | P00915 | 3/20 | 0.34 |
| ▸ | CA2 | P00918 | 2/20 | 0.33 |
| ▸ | ATM | Q13315 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 2/20 | 0.31 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.31 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.31 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.31 |
| ▸ | CES1 | P23141 | 1/20 | 0.31 |
| ▸ | CES2 | O00748 | 1/20 | 0.30 |
| ▸ | HPGD | P15428 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2383660 | 0.97 | ALDH1A1 (0.37) | ALDH1A1CA1CA2ATMTSHR | |
| SCHEMBL105787 | 0.97 | ALDH1A1 (0.37) | ALDH1A1CA1CA2ATMTSHR | |
| SCHEMBL107478 | 0.97 | ALDH1A1 (0.37) | ALDH1A1CA1CA2ATMTSHR | |
| SCHEMBL14694347 | 0.94 | ALDH1A1 (0.35) | ALDH1A1CA1CA2ATM | |
| SCHEMBL105852 | 0.90 | CYP3A4 (0.32) | TSHRCYP3A4NFKB1NPSR1 | |
| SCHEMBL104421 | 0.86 | CYP3A4 (0.32) | TSHRCYP3A4NFKB1NPSR1 | |
| SCHEMBL2384267 | 0.86 | CYP3A4 (0.32) | TSHRCYP3A4NFKB1NPSR1 | |
| SCHEMBL104904 | 0.86 | CYP3A4 (0.32) | TSHRCYP3A4NFKB1NPSR1 | |
| SCHEMBL14693822 | 0.84 | ALDH1A1 (0.41) | ALDH1A1CA2ATMTSHR | |
| SCHEMBL3342126 | 0.76 | CA2 (0.35) | ALDH1A1CA1CA2TSHRCYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| CN-112526822-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2025-02-28 | — | — | CN | disclosed |
| CN-112286000-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-12-03 | — | — | CN | disclosed |
| CN-111856882-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-11-29 | — | — | CN | disclosed |
| CN-118620392-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-09-10 | — | — | CN | disclosed |
| CN-114660896-B | Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound | 信越化学工业株式会社 | 2024-06-11 | — | — | CN | disclosed |
| CN-111208710-B | Iodine-containing thermosetting silicon-containing material, resist underlayer film forming composition for extreme ultraviolet lithography containing the same, and pattern forming method | 信越化学工业株式会社 | 2023-08-22 | — | — | CN | disclosed |
| CN-111458980-B | Composition for forming underlayer film of silicon-containing resist and method for forming pattern | 信越化学工业株式会社 | 2023-08-11 | — | — | CN | disclosed |
| CN-111856882-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2020-10-30 | — | — | CN | disclosed |
| US-20120052685-A1 | SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM-FORMED SUBSTRATE, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-01 | — | — | US | disclosed |
| US-8029974-B2 | Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-10-04 | — | — | US | disclosed |
| US-8026038-B2 | Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-27 | — | — | US | disclosed |
| US-20100285407-A1 | Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-11-11 | — | — | US | disclosed |
| US-20100147334-A1 | Coated-type silicon-containing film stripping process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| EP-2196858-A1 | Coated-type silicon-containing film stripping process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-06-16 | — | — | EP | disclosed |
| US-20100086872-A1 | Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-08 | — | — | US | disclosed |
| EP-2172808-A1 | Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process | Shinetsu Chemical Co., Ltd. (JP) | 2010-04-07 | — | — | EP | disclosed |
| US-20090136869-A1 | METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-28 | — | — | US | disclosed |
| EP-2063319-A1 | Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-05-27 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | ALDH1A1 1558/4885CA1 964/4885CA2 2105/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.