SCHEMBL106330

SCHEMBL106330

CCC(=O)C[S+]1CCCC1

nearest known ligand 0.43

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.43
FFAR3 O14843 1/20 0.30
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Bromide SCHEMBL7197738 0.98 TDP1 (0.41) TDP1
SCHEMBL685964 0.98 TDP1 (0.41) TDP1FFAR3
Bromide SCHEMBL7201741 0.95 TDP1 (0.39) TDP1FFAR3
Trifluoromethanesulfonic Acid SCHEMBL6548925 0.82
Bromide SCHEMBL2916644 0.81
SCHEMBL6728105 0.81 CES2 (0.36) FFAR3ALDH1A1
Trifluoromethanesulfonic Acid SCHEMBL6550644 0.80
SCHEMBL6727780 0.79 CES2 (0.35) TDP1FFAR3ALDH1A1
SCHEMBL6731220 0.79 TDP1 (0.38) TDP1
SCHEMBL686207 0.79 TDP1 (0.38) TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1014 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11697754-B2 Thermal conductive layer, photosensitive layer, photosensitive composition, manufacturing method for thermal conductive layer, and laminate and semiconductor device FUJIFILM CORPORATION (JP) 2023-07-11 US disclosed
US-11697754-B2 Thermal conductive layer, photosensitive layer, photosensitive composition, manufacturing method for thermal conductive layer, and laminate and semiconductor device FUJIFILM CORPORATION (JP) 2023-07-11 US disclosed
US-20230161249-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2023-05-25 US disclosed
US-11579528-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-02-14 US disclosed
US-20220206386-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2022-06-30 US disclosed
US-11181820-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2021-11-23 US disclosed
US-20210040370-A1 THERMAL CONDUCTIVE LAYER, PHOTOSENSITIVE LAYER, PHOTOSENSITIVE COMPOSITION, MANUFACTURING METHOD FOR THERMAL CONDUCTIVE LAYER, AND LAMINATE AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2021-02-11 US disclosed
US-10890847-B2 Pattern forming method, resist pattern, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2021-01-12 US disclosed
EP-2414896-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORP (JP) 2020-11-11 EP disclosed
US-10766992-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-08 US disclosed
US-20060228648-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-10-12 US disclosed
EP-1710230-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2006-10-11 EP disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20050048395-A1 Novel sulfonyldiazomethane compounds, photoacid generator, resist materials and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. 2005-03-03 US disclosed
US-20040229162-A1 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-11-18 US disclosed
US-20040224251-A1 Positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-11-11 US disclosed
US-6713612-B2 Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-03-30 US disclosed
US-20030224298-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-04 US disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
US-20020015913-A1 Chemical amplifying type positive resist composition and sulfonium salt SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-02-07 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030224298-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process VEGFA, DNMT3A, PIM3 TDP1 1005/4885FFAR3 13/4885ALDH1A1 3469/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.