SCHEMBL1069369

SCHEMBL1069369

CCC[Si](OCC)(OCC)OCC.CNC(C)O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Isopropyl Alcohol SCHEMBL27669668 0.87 HSD17B10 (0.31)
Isopropyl Alcohol SCHEMBL27589896 0.85 HSD17B10 (0.30)
SCHEMBL1082050 0.84
Dimethylamine SCHEMBL2406369 0.82
SCHEMBL303573 0.81 LMNA (0.33)
SCHEMBL1066965 0.80 ACHE (0.31)
SCHEMBL28025977 0.79 SPHK1 (0.30)
SCHEMBL24959 0.79
Isopropylamine SCHEMBL28374463 0.78 OPRM1 (0.33)
SCHEMBL18240047 0.78 OPRM1 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20110111212-A1 Method of Applying An Anti-Corrosion And/Or Adhesion Promoting Coating To A Metal And Resulting Coated Metal MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2011-05-12 US claimed
US-7875318-B2 Hydrolyzing partially or completely hydrolyzed silane possessing one or more hydroxyl groups; bis-(hydroxyethyl)aminopropyltriethoxysilane; chromium free; nontoxic; environmentally friendly MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2011-01-25 US claimed
EP-2147041-A2 METHOD OF APPLYING AN ANTI-CORROSION AND/OR ADHESION PROMOTING COATING TO A METAL AND RESULTING COATED METAL Momentive Performance Materials Inc. (US) 2010-01-27 EP claimed
WO-2008133916-A2 METHOD OF APPLYING AN ANTI-CORROSION AND/OR ADHESION PROMOTING COATING TO A METAL AND RESULTING COATED METAL MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2008-11-06 WO claimed
US-20080268162-A1 Method of applying an anti-corrosion and/or adhesion promoting coating to a metal and resulting coated metal MOMENTIVE PERFORMANCE MATERIALS INC. 2008-10-30 US claimed
CN-110591019-B Modified acrylic resin solution and preparation method thereof, anticorrosive paint and application thereof 科诺思膜技术(厦门)有限公司 2021-02-05 CN disclosed
CN-110591019-A Modified acrylic resin solution and preparation method thereof, anticorrosive paint and application thereof 科诺思膜技术(厦门)有限公司 2019-12-20 CN disclosed
US-8501314-B2 Method of applying an anti-corrosion and/or adhesion promoting coating to a metal and resulting coated metal MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2013-08-06 US disclosed
US-20110111212-A1 Method of Applying An Anti-Corrosion And/Or Adhesion Promoting Coating To A Metal And Resulting Coated Metal MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2011-05-12 US disclosed
US-7875318-B2 Hydrolyzing partially or completely hydrolyzed silane possessing one or more hydroxyl groups; bis-(hydroxyethyl)aminopropyltriethoxysilane; chromium free; nontoxic; environmentally friendly MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2011-01-25 US disclosed
EP-1296365-B1 Method of film formation JSR CORP (JP) 2010-09-22 EP disclosed
EP-2147041-A2 METHOD OF APPLYING AN ANTI-CORROSION AND/OR ADHESION PROMOTING COATING TO A METAL AND RESULTING COATED METAL Momentive Performance Materials Inc. (US) 2010-01-27 EP disclosed
WO-2008133916-A2 METHOD OF APPLYING AN ANTI-CORROSION AND/OR ADHESION PROMOTING COATING TO A METAL AND RESULTING COATED METAL MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2008-11-06 WO disclosed
US-20080268162-A1 Method of applying an anti-corrosion and/or adhesion promoting coating to a metal and resulting coated metal MOMENTIVE PERFORMANCE MATERIALS INC. 2008-10-30 US disclosed
US-6890605-B2 Method of film formation, insulating film, and substrate for semiconductor JSR CORPORATION (JP) 2005-05-10 US disclosed
US-20030059550-A1 Method of film formation, insulating film, and substrate for semiconductor JSR CORPORATION (JP) 2003-03-27 US disclosed
EP-1296365-A2 Method of film formation, insulating film, and substrate for semiconductor JSR Corporation (JP) 2003-03-26 EP disclosed