Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23015555 | 1.00 | ALDH1A1 (0.33) | ALDH1A1L3MBTL1 | |
| SCHEMBL13225278 | 0.86 | — | — | |
| SCHEMBL13225521 | 0.84 | — | — | |
| SCHEMBL686014 | 0.81 | CHRM3 (0.30) | — | |
| SCHEMBL686234 | 0.79 | MAPT (0.48) | ALDH1A1L3MBTL1 | |
| SCHEMBL18633945 | 0.78 | GSR (0.32) | L3MBTL1 | |
| SCHEMBL686590 | 0.77 | ALDH1A1 (0.31) | ALDH1A1L3MBTL1 | |
| SCHEMBL22399915 | 0.77 | ALDH1A1 (0.31) | ALDH1A1L3MBTL1 | |
| SCHEMBL21731857 | 0.77 | — | — | |
| SCHEMBL13225406 | 0.77 | ALDH1A1 (0.33) | ALDH1A1L3MBTL1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 314 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230375925-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN | FUJIFILM CORPORATION (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230375925-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN | FUJIFILM CORPORATION (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230367210-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-16 | — | — | US | disclosed |
| US-11703758-B2 | Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11703758-B2 | Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11693321-B2 | Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-04 | — | — | US | disclosed |
| US-11693321-B2 | Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-04 | — | — | US | disclosed |
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| US-20230132693-A1 | RINSING LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2023-05-04 | — | — | US | disclosed |
| US-11640113-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method of manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-02 | — | — | US | disclosed |
| US-7572570-B2 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-11 | — | — | US | disclosed |
| US-7566522-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-07-28 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080248423-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080220369-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080213695-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-04 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080176168-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-24 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-31 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN3, NHERF1, HCN4 | ALDH1A1 972/4885L3MBTL1 4862/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.