SCHEMBL107279

SCHEMBL107279

O=C(OCc1ccccc1)C(F)(F)S(=O)(=O)O

nearest known ligand 0.50

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.49
PTPN1 P18031 4/20 0.48
PTPRC P08575 1/20 0.48
KMT2A Q03164 2/20 0.47
TDP1 Q9NUW8 2/20 0.47
MAPK1 P28482 1/20 0.47
L3MBTL1 Q9Y468 1/20 0.47
SLC6A2 P23975 1/20 0.47
SLC6A3 Q01959 1/20 0.47
MEN1 O00255 1/20 0.47
CA1 P00915 3/20 0.46
CA2 P00918 3/20 0.46
CA12 O43570 2/20 0.46
CA9 Q16790 2/20 0.46
LMNA P02545 2/20 0.44
HCAR2 Q8TDS4 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2605994 0.90 ALDH1A1 (0.49) ALDH1A1PTPN1PTPRCKMT2ATDP1
SCHEMBL7596030 0.87 ALDH1A1 (0.49) ALDH1A1PTPN1PTPRCKMT2ATDP1
SCHEMBL13714422 0.85 ALDH1A1 (0.36) ALDH1A1PTPN1PTPRCKMT2AL3MBTL1
SCHEMBL13842636 0.84 KMT2A (0.48) ALDH1A1PTPN1PTPRCKMT2ATDP1
SCHEMBL18896877 0.84 CA2 (0.44) ALDH1A1PTPN1PTPRCKMT2ATDP1
SCHEMBL13842654 0.84 KMT2A (0.48) ALDH1A1PTPN1PTPRCKMT2ATDP1
SCHEMBL2605928 0.84 HCAR2 (0.46) ALDH1A1TDP1MAPK1L3MBTL1CA1
SCHEMBL2605925 0.82 SLC1A3 (0.42) PTPN1TDP1CA1CA2
SCHEMBL2605892 0.81 LMNA (0.54) ALDH1A1KMT2ATDP1MAPK1SLC6A3
SCHEMBL18499619 0.81 CA1 (0.45) ALDH1A1PTPN1PTPRCKMT2AL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 203 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023181856-A1 COMPOUND, PHOTOSENSITIVE COMPOSITION, AND METHOD FOR FORMING PATTERN 三菱ケミカル株式会社 2023-09-28 WO disclosed
WO-2023181855-A1 PHOTOSENSITIVE COMPOSITION AND PATTERN FORMATION METHOD 三菱ケミカル株式会社 2023-09-28 WO disclosed
US-10444627-B2 Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2019-10-15 US disclosed
US-10031419-B2 Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device FUJIFILM CORPORATION (JP) 2018-07-24 US disclosed
US-20180120697-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION FILM USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-9929376-B2 Laminate, kit for manufacturing organic semiconductor, and resist composition for manufacturing organic semiconductor FUJIFILM CORPORATION (JP) 2018-03-27 US disclosed
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9829796-B2 Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2017-11-28 US disclosed
US-9651863-B2 Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-05-16 US disclosed
US-9651863-B2 Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-05-16 US disclosed
US-7572570-B2 Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-08-11 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-7527910-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-05-05 US disclosed
US-20080248423-A1 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-10-09 US disclosed
US-20080220369-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-11 US disclosed
US-20080213695-A1 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-04 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080176168-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-24 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20070184382-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-08-09 US disclosed