SCHEMBL107393

SCHEMBL107393

CCCCC([C](C(F)(F)F)C(F)(F)F)C(F)(F)F

nearest known ligand 0.35

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
FAAH O00519 8/20 0.35
CES1 P23141 6/20 0.34
CES2 O00748 3/20 0.34
MEN1 O00255 1/20 0.34
CYP1A2 P05177 1/20 0.34
KMT2A Q03164 1/20 0.34
HSD17B10 Q99714 1/20 0.34
ALDH1A1 P00352 1/20 0.33
CA1 P00915 1/20 0.32
CA2 P00918 1/20 0.32
FDPS P14324 1/20 0.32
DNM1 Q05193 1/20 0.32
EPHX1 P07099 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8801518 0.86
SCHEMBL9101043 0.76 CA2 (0.48) FAAHCES1CES2MEN1KMT2A
SCHEMBL11299270 0.76 CA2 (0.48) FAAHCES1CES2MEN1KMT2A
SCHEMBL11307885 0.76 CA2 (0.48) FAAHCES1CES2MEN1KMT2A
SCHEMBL10442273 0.74 CA2 (0.38) FAAHCES1CES2MEN1CYP1A2
SCHEMBL8995458 0.71 CES2 (0.52) FAAHCES1CES2MEN1CYP1A2
SCHEMBL11298990 0.71 CA2 (0.36) FAAHCES1CES2MEN1CYP1A2
SCHEMBL6115859 0.71 PDF (0.41) FAAHCES1CES2MEN1CYP1A2
SCHEMBL6115966 0.71 CA2 (0.44) FAAHCES1CES2MEN1CYP1A2
SCHEMBL6117851 0.70 CA1 (0.36) FAAHCES1CES2MEN1CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 556 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3385791-B1 PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, LAMINATE FILM, AND UPPER LAYER FILM FORMATION COMPOSITION FUJIFILM CORP (JP) 2024-02-28 EP disclosed
WO-2024009732-A1 POSITIVE-ACTING PHOTOSENSITIVE RESIN COMPOSITION 日本ポリテック株式会社 2024-01-11 WO disclosed
WO-2023080254-A1 POSITIVE-ACTING PHOTOSENSITIVE RESIN COMPOSITION 株式会社レゾナック 2023-05-11 WO disclosed
WO-2023286586-A1 PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM 富士フイルム株式会社 2023-01-19 WO disclosed
US-11249395-B2 Pattern forming method, method for manufacturing electronic device, laminate film, and composition for forming upper layer film FUJIFILM CORPORATION (JP) 2022-02-15 US disclosed
US-20210286263-A1 ACTIVE RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2021-09-16 US disclosed
EP-2550562-B1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORP (JP) 2021-04-21 EP disclosed
EP-2539769-B1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORP (JP) 2021-04-07 EP disclosed
EP-2414896-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORP (JP) 2020-11-11 EP disclosed
US-10761426-B2 Pattern forming method, method for manufacturing electronic device, and laminate FUJIFILM CORPORATION (JP) 2020-09-01 US disclosed
US-20080206669-A1 POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
EP-1962139-A1 Negative resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2008-08-27 EP disclosed
US-20080187860-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
WO-2008093856-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2008-08-07 WO disclosed
US-20080081290-A1 RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
EP-1903394-A1 Resist composition, resin for use in the resist composition, and pattern-forming method using the resist composition FUJIFILM Corporation (JP) 2008-03-26 EP disclosed
US-20070178405-A1 Positive resist composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-08-02 US disclosed
US-20070134588-A1 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2007-06-14 US disclosed
EP-1795960-A2 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition Fujifilm Corporation (JP) 2007-06-13 EP disclosed
EP-1754999-A2 Positive resist composition and method of pattern formation with the same Fuji Photo Film Co., Ltd. (JP) 2007-02-21 EP disclosed