Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | APOBEC3A | P31941 | 1/20 | 0.48 |
| ▸ | APOBEC3G | Q9HC16 | 1/20 | 0.48 |
| ▸ | HTT | P42858 | 3/20 | 0.47 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.47 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.47 |
| ▸ | CYP19A1 | P11511 | 2/20 | 0.46 |
| ▸ | MAPT | P10636 | 2/20 | 0.45 |
| ▸ | NPC1 | O15118 | 1/20 | 0.43 |
| ▸ | RAB9A | P51151 | 1/20 | 0.43 |
| ▸ | GAA | P10253 | 1/20 | 0.42 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.37 |
| ▸ | LIPA | P38571 | 1/20 | 0.37 |
| ▸ | EPHX1 | P07099 | 2/20 | 0.35 |
| ▸ | MEN1 | O00255 | 1/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.35 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.34 |
| ▸ | MLNR | O43193 | 1/20 | 0.33 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.33 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.33 |
| ▸ | CHRM3 | P20309 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3434648 | 0.91 | EPHX1 (0.37) | APOBEC3AAPOBEC3GHTTSMN1; SMN2KDM4E | |
| SCHEMBL14747376 | 0.88 | APOBEC3A (0.37) | APOBEC3AAPOBEC3GHTTSMN1; SMN2KDM4E | |
| SCHEMBL14010864 | 0.87 | APOBEC3A (0.43) | APOBEC3AAPOBEC3GHTTSMN1; SMN2KDM4E | |
| SCHEMBL16273466 | 0.86 | APOBEC3A (0.36) | APOBEC3AAPOBEC3GHTTSMN1; SMN2KDM4E | |
| SCHEMBL18253388 | 0.86 | APOBEC3A (0.36) | APOBEC3AAPOBEC3GHTTSMN1; SMN2KDM4E | |
| SCHEMBL16575867 | 0.86 | APOBEC3A (0.36) | APOBEC3AAPOBEC3GHTTSMN1; SMN2KDM4E | |
| SCHEMBL18373347 | 0.86 | APOBEC3A (0.48) | APOBEC3AAPOBEC3GHTTSMN1; SMN2KDM4E | |
| SCHEMBL2625661 | 0.84 | CHRM3 (0.34) | APOBEC3AAPOBEC3GHTTSMN1; SMN2KDM4E | |
| SCHEMBL132269 | 0.84 | CYP19A1 (0.40) | APOBEC3AAPOBEC3GHTTSMN1; SMN2KDM4E | |
| SCHEMBL18119952 | 0.84 | FKBP1A (0.34) | APOBEC3AAPOBEC3GHTTSMN1; SMN2KDM4E |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 432 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11795334-B2 | Photo-curable ink composition and method for forming image | FUJIFILM CORPORATION (JP) | 2023-10-24 | — | — | US | disclosed |
| US-11073763-B2 | Photoresist and method | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-07-27 | — | — | US | disclosed |
| US-20200133125-A1 | Photoresist and Method | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-04-30 | — | — | US | disclosed |
| US-20190346766-A1 | Photoresist and Method | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-11-14 | — | — | US | disclosed |
| US-10365561-B2 | Photoresist and method | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-07-30 | — | — | US | disclosed |
| US-20190041749-A1 | Photoresist and Method | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-02-07 | — | — | US | disclosed |
| US-10175578-B2 | Pattern forming method, composition for forming protective film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2019-01-08 | — | — | US | disclosed |
| US-20180217499-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-08-02 | — | — | US | disclosed |
| US-20180217503-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-08-02 | — | — | US | disclosed |
| US-20180210339-A1 | RESIST COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE, EACH USING RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2018-07-26 | — | — | US | disclosed |
| EP-1972641-A2 | Resist composition and pattern-forming method using same | FUJIFILM Corporation (JP) | 2008-09-24 | — | — | EP | disclosed |
| US-20080227025-A1 | Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups | FUJIFILM CORPORATION (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080206669-A1 | POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-20080206668-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-20080171287-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-07-17 | — | — | US | disclosed |
| US-20080081290-A1 | RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20070178405-A1 | Positive resist composition and method of pattern formation with the same | FUJI PHOTO FILM CO., LTD. | 2007-08-02 | — | — | US | disclosed |
| US-20070172761-A1 | Positive photosensitive composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2007-07-26 | — | — | US | disclosed |
| US-20070148595-A1 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |
| US-20070134588-A1 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-14 | — | — | US | disclosed |