SCHEMBL14747376

SCHEMBL14747376

CCC(C)(C)C(=O)OC1CCC(C(C)(C)O)CC1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
APOBEC3A P31941 1/20 0.37
APOBEC3G Q9HC16 1/20 0.37
SMN1; SMN2 Q16637 2/20 0.36
KDM4E B2RXH2 1/20 0.36
HTT P42858 1/20 0.36
CYP19A1 P11511 2/20 0.35
MAPT P10636 2/20 0.35
NPC1 O15118 1/20 0.34
RAB9A P51151 1/20 0.34
CHRM3 P20309 4/20 0.33
MLNR O43193 1/20 0.33
CHRM2 P08172 1/20 0.33
CHRM1 P11229 1/20 0.33
HTR2A P28223 1/20 0.33
HTR2C P28335 1/20 0.33
HRH1 P35367 1/20 0.33
OPRM1 P35372 1/20 0.33
DRD3 P35462 1/20 0.33
OPRK1 P41145 1/20 0.33
HTR2B P41595 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18253416 0.94 APOBEC3A (0.37) APOBEC3AAPOBEC3GSMN1; SMN2KDM4EHTT
SCHEMBL18253353 0.92 EPHX1 (0.41) APOBEC3AAPOBEC3GSMN1; SMN2KDM4EHTT
SCHEMBL18253385 0.90 APOBEC3A (0.33) APOBEC3AAPOBEC3GSMN1; SMN2KDM4EHTT
SCHEMBL18253418 0.90 EPHX1 (0.37) APOBEC3AAPOBEC3GSMN1; SMN2KDM4EHTT
SCHEMBL3434648 0.89 EPHX1 (0.37) APOBEC3AAPOBEC3GSMN1; SMN2KDM4EHTT
SCHEMBL18253388 0.88 APOBEC3A (0.36) APOBEC3AAPOBEC3GSMN1; SMN2KDM4EHTT
SCHEMBL107668 0.88 APOBEC3A (0.48) APOBEC3AAPOBEC3GSMN1; SMN2KDM4EHTT
SCHEMBL16575867 0.85 APOBEC3A (0.36) APOBEC3AAPOBEC3GSMN1; SMN2KDM4EHTT
SCHEMBL16273466 0.85 APOBEC3A (0.36) APOBEC3AAPOBEC3GSMN1; SMN2KDM4EHTT
SCHEMBL18253387 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-20230259029-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-08-17 US disclosed
US-11703758-B2 Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-18 US disclosed
US-20230168581-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-06-01 US disclosed
US-20230148344-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND METHOD FOR PRODUCING COMPOUND FUJIFILM CORPORATION (JP) 2023-05-11 US disclosed
US-20230132693-A1 RINSING LIQUID AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2023-05-04 US disclosed
US-9790166-B2 Polymer, monomer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-17 US disclosed
US-20170226252-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
US-20170226252-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-11 US disclosed
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-11 US disclosed
US-20160342086-A1 POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-24 US disclosed
US-20160342086-A1 POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-24 US disclosed
US-8389200-B2 Pattern forming method FUJIFILM CORPORATION (JP) 2013-03-05 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160342086-A1 POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS PARG, RAD1, POLR1A APOBEC3A 1287/4885APOBEC3G 1373/4885SMN1; SMN2 1872/4885
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-2, H1-0, H1-4 APOBEC3A 3753/4885APOBEC3G 3607/4885SMN1; SMN2 999/4885
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, COL1A1, RAD51 APOBEC3A 1144/4885APOBEC3G 836/4885SMN1; SMN2 1819/4885
US-20170226252-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS PARG, SMARCA1, SMARCA2 APOBEC3A 1798/4885APOBEC3G 1686/4885SMN1; SMN2 1471/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.