SCHEMBL107675

SCHEMBL107675

CCC(C)(C)C(=O)N(C(C)C)C(C)C

nearest known ligand 0.39

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
RIPK1 Q13546 20/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14905848 0.81 POLB (0.31)
SCHEMBL613970 0.79 RIPK1 (0.42) RIPK1
SCHEMBL20100419 0.76 RIPK1 (0.39) RIPK1
SCHEMBL19954407 0.74 MMP8 (0.33)
SCHEMBL107683 0.74
SCHEMBL807037 0.74
SCHEMBL13829441 0.74
SCHEMBL679030 0.74 POLB (0.36)
SCHEMBL12296062 0.73
SCHEMBL2740778 0.72 RIPK1 (0.47) RIPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 289 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10031419-B2 Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device FUJIFILM CORPORATION (JP) 2018-07-24 US disclosed
US-20180175299-A1 ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR FILM FUJIFILM CORPORATION (JP) 2018-06-21 US disclosed
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9897922-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2018-02-20 US disclosed
US-9835945-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-12-05 US disclosed
US-9829796-B2 Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2017-11-28 US disclosed
US-9810981-B2 Pattern formation method, etching method, electronic device manufacturing method, and electronic device FUJIFILM CORPORATION (JP) 2017-11-07 US disclosed
US-9799832-B2 Organic thin-film transistor and method for manufacturing same FUJIFILM CORPORATION (JP) 2017-10-24 US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
US-20080241737-A1 RESIST COMPOSITION AND PATTERN-FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080227025-A1 Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups FUJIFILM CORPORATION (JP) 2008-09-18 US disclosed
US-20080206669-A1 POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
US-20080206668-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
US-20080171287-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-07-17 US disclosed
US-7368220-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2008-05-06 US disclosed
US-20080081290-A1 RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20070178405-A1 Positive resist composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-08-02 US disclosed
US-20070148589-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed
US-20070134588-A1 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2007-06-14 US disclosed