⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12455827 | 0.78 | — | — | |
| SCHEMBL6118149 | 0.77 | NR1H2 (0.34) | — | |
| SCHEMBL6116484 | 0.75 | MLYCD (0.35) | — | |
| SCHEMBL14905848 | 0.74 | POLB (0.31) | — | |
| SCHEMBL107675 | 0.74 | RIPK1 (0.39) | — | |
| SCHEMBL9626798 | 0.72 | MLYCD (0.30) | — | |
| SCHEMBL13829441 | 0.72 | — | — | |
| SCHEMBL6057228 | 0.71 | CHRM2 (0.38) | — | |
| SCHEMBL13966650 | 0.69 | — | — | |
| SCHEMBL18373354 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 239 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10031419-B2 | Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device | FUJIFILM CORPORATION (JP) | 2018-07-24 | — | — | US | disclosed |
| US-20180175299-A1 | ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR FILM | FUJIFILM CORPORATION (JP) | 2018-06-21 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9810981-B2 | Pattern formation method, etching method, electronic device manufacturing method, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-07 | — | — | US | disclosed |
| US-9799832-B2 | Organic thin-film transistor and method for manufacturing same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9709892-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-9709891-B2 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-20170184973-A1 | ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-29 | — | — | US | disclosed |
| US-20170115571-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-20080305429-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-12-11 | — | — | US | disclosed |
| US-20080292989-A1 | POSITIVE WORKING PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-11-27 | — | — | US | disclosed |
| US-20080248421-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248420-A1 | POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080241737-A1 | RESIST COMPOSITION AND PATTERN-FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080227025-A1 | Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups | FUJIFILM CORPORATION (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080206669-A1 | POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-20080206668-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-20080081290-A1 | RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20070134588-A1 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-14 | — | — | US | disclosed |