SCHEMBL107977

SCHEMBL107977

CCC(C)(C)C(=O)OC(C)(C)C12CC3CC4C5CC(CC41)CC2C5C3

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14802562 0.85
SCHEMBL106942 0.80
SCHEMBL13137692 0.79 ALDH1A1 (0.31)
SCHEMBL14556876 0.78
SCHEMBL13987960 0.76 ALDH1A1 (0.32)
SCHEMBL47390 0.75 KMT2A (0.35)
SCHEMBL13137688 0.74 ALDH1A1 (0.33)
SCHEMBL106998 0.72
SCHEMBL47385 0.71 KMT2A (0.33)
SCHEMBL10228571 0.71 HSD11B1 (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 387 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11693321-B2 Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-04 US disclosed
US-20180217503-A1 TREATMENT LIQUID AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2018-08-02 US disclosed
US-20180217499-A1 TREATMENT LIQUID AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2018-08-02 US disclosed
US-20180217497-A1 PATTERN FORMING METHOD AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FUJIFILM CORPORATION (JP) 2018-08-02 US disclosed
US-20180210339-A1 RESIST COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE, EACH USING RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2018-07-26 US disclosed
US-10031419-B2 Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device FUJIFILM CORPORATION (JP) 2018-07-24 US disclosed
US-10018913-B2 Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2018-07-10 US disclosed
US-20180180996-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE FUJIFILM CORPORATION (JP) 2018-06-28 US disclosed
US-20180181003-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE FUJIFILM CORPORATION (JP) 2018-06-28 US disclosed
US-9996003-B2 Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2018-06-12 US disclosed
US-20070172769-A1 Pattern forming method FUJIFILM CORPORATION (JP) 2007-07-26 US disclosed
US-20070148592-A1 Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed
US-20070148595-A1 Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed
US-20070141512-A1 Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-06-21 US disclosed
US-20070134588-A1 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2007-06-14 US disclosed
US-20070134590-A1 Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent FUJIFILM CORPORATION. (JP) 2007-06-14 US disclosed
US-20070087288-A1 Positive-working photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION 2007-04-19 US disclosed
US-20070072118-A1 Positive photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed
US-20070054217-A1 Positive photosensitive composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-08 US disclosed
US-20070031757-A1 Positive photosensitive composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-02-08 US disclosed