Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMT2A | Q03164 | 4/20 | 0.33 |
| ▸ | MEN1 | O00255 | 3/20 | 0.33 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.31 |
| ▸ | GLA | P06280 | 1/20 | 0.31 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.31 |
| ▸ | CYP17A1 | P05093 | 1/20 | 0.31 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13059593 | 0.84 | MEN1 (0.31) | KMT2AMEN1MAPK1ALDH1A1 | |
| SCHEMBL15290870 | 0.83 | MEN1 (0.30) | KMT2AMEN1MAPK1 | |
| SCHEMBL47390 | 0.83 | KMT2A (0.35) | KMT2AMEN1MAPK1ALDH1A1LMNA | |
| SCHEMBL15096009 | 0.81 | EPHX2 (0.33) | ALDH1A1EPHX2 | |
| SCHEMBL13594329 | 0.80 | — | — | |
| SCHEMBL10181906 | 0.78 | DPP4 (0.30) | — | |
| SCHEMBL106979 | 0.78 | MEN1 (0.32) | KMT2AMEN1MAPK1ALDH1A1LMNA | |
| SCHEMBL824218 | 0.77 | ALDH1A1 (0.36) | KMT2AMEN1MAPK1ALDH1A1LMNA | |
| SCHEMBL9944504 | 0.76 | — | — | |
| SCHEMBL22643378 | 0.76 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 505 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180081277-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM | FUJIFILM CORPORATION (JP) | 2018-03-22 | — | — | US | disclosed |
| US-20180011406-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM | FUJIFILM CORPORATION (JP) | 2018-01-11 | — | — | US | disclosed |
| US-20170371244-A1 | COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-12-28 | — | — | US | disclosed |
| US-20170351179-A1 | COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-12-07 | — | — | US | disclosed |
| US-20170349686-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-12-07 | — | — | US | disclosed |
| US-9835945-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-12-05 | — | — | US | disclosed |
| US-9798235-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-20170255098-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2017-09-07 | — | — | US | disclosed |
| US-9709891-B2 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-20170199461-A1 | PATTERN FORMING METHOD, RESIST PATTERN, AND PROCESS FOR PRODUCING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-07-13 | — | — | US | disclosed |
| US-20070077519-A1 | Pattern forming method and resist composition used therefor | FUJI PHOTO FILM CO., LTD. | 2007-04-05 | — | — | US | disclosed |
| US-20070072118-A1 | Positive photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-29 | — | — | US | disclosed |
| US-20070065752-A1 | Positive resist composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-22 | — | — | US | disclosed |
| US-20070065753-A1 | Positive resist composition for immersion exposure and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-22 | — | — | US | disclosed |
| US-20070059639-A1 | Positive resist composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-15 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-20070054217-A1 | Positive photosensitive composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-08 | — | — | US | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| US-20070031757-A1 | Positive photosensitive composition and method of pattern formation with the same | FUJI PHOTO FILM CO., LTD. | 2007-02-08 | — | — | US | disclosed |
| US-20070026343-A1 | Chemical amplification-type resist composition and production process thereof | FUJI PHOTO FILM CO., LTD. | 2007-02-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170255098-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | POLR2H, POLQ, RXRA | KMT2A 1647/4885MEN1 3693/4885MAPK1 2145/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.