Known targets — ChEMBL curated mechanism
ADRB1CDK4CDK6CHRM2CHRM3DPP4DRD2DRD3DRD4EGFRHRH1HTR1BHTR1DHTR1FHTR2AHTR2CHTR4SLC6A2SLC6A4
The experimentally established mechanism targets of Tetrapropylammonium. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FFAR3 | O14843 | 3/20 | 0.48 |
| ▸ | HDAC3 | O15379 | 3/20 | 0.48 |
| ▸ | HDAC1 | Q13547 | 3/20 | 0.48 |
| ▸ | HDAC2 | Q92769 | 3/20 | 0.48 |
| ▸ | HDAC8 | Q9BY41 | 3/20 | 0.48 |
| ▸ | AKR1B1 | P15121 | 1/20 | 0.44 |
| ▸ | BBOX1 | O75936 | 1/20 | 0.44 |
| ▸ | SLC22A1 | O15245 | 1/20 | 0.43 |
| ▸ | PPARG | P37231 | 6/20 | 0.43 |
| ▸ | PPARD | Q03181 | 6/20 | 0.43 |
| ▸ | PPARA | Q07869 | 6/20 | 0.43 |
| ▸ | GPR84 | Q9NQS5 | 5/20 | 0.43 |
| ▸ | HDAC11 | Q96DB2 | 5/20 | 0.43 |
| ▸ | TSHR | P16473 | 4/20 | 0.43 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.43 |
| ▸ | TLR2 | O60603 | 2/20 | 0.43 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.43 |
| ▸ | FABP4 | P15090 | 2/20 | 0.43 |
| ▸ | PTPN1 | P18031 | 2/20 | 0.43 |
| ▸ | SLC22A6 | Q4U2R8 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetrapropylammonium SCHEMBL105446 | 0.91 | FFAR3 (0.57) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Tetrapropylammonium SCHEMBL108659 | 0.89 | SLC22A1 (0.56) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Tetrapropylammonium SCHEMBL105339 | 0.88 | AKR1B1 (0.58) | AKR1B1PPARGPPARDPPARAGPR84 | |
| Tetrapropylammonium SCHEMBL107055 | 0.88 | AKR1B1 (0.52) | AKR1B1BBOX1PPARGPPARDPPARA | |
| Tetrabuthylammonium SCHEMBL108934 | 0.88 | AKR1B1 (0.52) | AKR1B1SLC22A1PPARGPPARDPPARA | |
| Sebacic Acid SCHEMBL5874346 | 0.86 | GPR84 (0.59) | AKR1B1PPARGPPARDPPARAGPR84 | |
| Tetrapropylammonium SCHEMBL106407 | 0.84 | FFAR3 (0.70) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Tetrapropylammonium SCHEMBL105337 | 0.82 | CA1 (0.58) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Tetrapropylammonium SCHEMBL107053 | 0.82 | CA1 (0.58) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Tetrylammonium SCHEMBL5874617 | 0.82 | FFAR3 (0.46) | FFAR3HDAC3HDAC1HDAC2HDAC8 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2426558-B1 | Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process | SHINETSU CHEMICAL CO (JP) | 2018-10-24 | — | — | EP | disclosed |
| EP-2500775-B1 | PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR | SHINETSU CHEMICAL CO (JP) | 2018-01-03 | — | — | EP | disclosed |
| US-8951711-B2 | Patterning process and composition for forming silicon-containing film usable therefor | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-10 | — | — | US | disclosed |
| US-20140342289-A1 | PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-11-20 | — | — | US | disclosed |
| US-8852844-B2 | Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-10-07 | — | — | US | disclosed |
| US-8835102-B2 | Patterning process and composition for forming silicon-containing film usable therefor | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-16 | — | — | US | disclosed |
| EP-2172807-B1 | Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-06-18 | — | — | EP | disclosed |
| EP-2172808-B1 | Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-06-04 | — | — | EP | disclosed |
| US-8652267-B2 | Coated-type silicon-containing film stripping process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-18 | — | — | US | disclosed |
| US-8652750-B2 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-18 | — | — | US | disclosed |
| EP-2011829-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-01-07 | — | — | EP | disclosed |
| EP-2011830-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-01-07 | — | — | EP | disclosed |
| EP-1867681-B1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHINETSU CHEMICAL CO (JP) | 2008-12-31 | — | — | EP | disclosed |
| US-20080274432-A1 | SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080026322-A1 | Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| EP-1867681-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-12-19 | — | — | EP | disclosed |
| EP-1845132-A2 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shinetsu Chemical Co., Ltd. (JP) | 2007-10-17 | — | — | EP | disclosed |
| US-20070238300-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. | 2007-10-11 | — | — | US | disclosed |
| US-7128976-B2 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2006-10-31 | — | — | US | disclosed |
| US-20030091838-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2003-05-15 | — | — | US | disclosed |