SCHEMBL110539

SCHEMBL110539

CCC(C)C(=O)OC1(C)C2CC3CC(C2)CC1C3

nearest known ligand 0.40

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 2/20 0.40
CYP19A1 P11511 2/20 0.40
ALDH1A1 P00352 3/20 0.34
KMT2A Q03164 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
LMNA P02545 1/20 0.30
HSD11B1 P28845 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11948968 0.90 CYP17A1 (0.36) CYP17A1CYP19A1ALDH1A1
SCHEMBL824232 0.86 CYP17A1 (0.41) CYP17A1CYP19A1ALDH1A1
SCHEMBL14527805 0.85 CYP17A1 (0.39) CYP17A1CYP19A1
SCHEMBL16200789 0.85 CYP17A1 (0.36) CYP17A1CYP19A1ALDH1A1KMT2ASMN1; SMN2
SCHEMBL11946899 0.84 CYP17A1 (0.40) CYP17A1CYP19A1ALDH1A1
SCHEMBL824227 0.84 CYP17A1 (0.40) CYP17A1CYP19A1
SCHEMBL683427 0.83 ALDH1A1 (0.34) ALDH1A1KMT2ASMN1; SMN2LMNAHSD11B1
SCHEMBL879277 0.83 ALDH1A1 (0.33) ALDH1A1KMT2ASMN1; SMN2LMNAHSD11B1
SCHEMBL14253570 0.83 ALDH1A1 (0.36) CYP17A1CYP19A1ALDH1A1KMT2ASMN1; SMN2
SCHEMBL13932776 0.83 CYP17A1 (0.33) CYP17A1CYP19A1ALDH1A1KMT2ASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 769 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230314943-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME MERCK PATENT GMBH (DE) 2023-10-05 US disclosed
US-10007181-B2 Chemically amplified positive resist dry film, dry film laminate and method of preparing laminate SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-9989847-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-05 US disclosed
US-9958775-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask FUJIFILM CORPORATION (JP) 2018-05-01 US disclosed
US-9946157-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-04-17 US disclosed
US-20180087010-A1 PRE-RINSING LIQUID, PRE-RINSING TREATMENT METHOD, AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2018-03-29 US disclosed
US-20180065924-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-03-08 US disclosed
US-20180065925-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-03-08 US disclosed
US-20180031969-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-02-01 US disclosed
US-9798235-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-10-24 US disclosed
US-7192681-B2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-20070042290-A1 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-20070026343-A1 Chemical amplification-type resist composition and production process thereof FUJI PHOTO FILM CO., LTD. 2007-02-01 US disclosed
US-7163776-B2 Positive-working resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-01-16 US disclosed
US-7160669-B2 Chemical amplification type resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-01-09 US disclosed
US-7157208-B2 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 US disclosed
US-7157207-B2 Polymer, resist material and patterning processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180065925-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1S, C1R, CRY1 CYP17A1 1726/4885CYP19A1 2084/4885ALDH1A1 1698/4885
US-20180065924-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1R, RER1, C1S CYP17A1 2353/4885CYP19A1 1763/4885ALDH1A1 2788/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.