Known targets — ChEMBL curated mechanism
ACHEBDKRB2CHRM1CHRM2CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNGGUCY1A1GUCY1A2GUCY1B1GUCY1B2NAMPTPTAFRSLC10A2SLC6A2SLC6A3TACR1dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ACHE known ✓ | P22303 | 13/20 | 0.79 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.93 |
| ▸ | MEN1 | O00255 | 1/20 | 0.93 |
| ▸ | RGS12 | O14924 | 1/20 | 0.93 |
| ▸ | NPC1 | O15118 | 1/20 | 0.93 |
| ▸ | USP2 | O75604 | 1/20 | 0.93 |
| ▸ | LMNA | P02545 | 1/20 | 0.93 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.93 |
| ▸ | THRB | P10828 | 1/20 | 0.93 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.93 |
| ▸ | HTT | P42858 | 1/20 | 0.93 |
| ▸ | RAD52 | P43351 | 1/20 | 0.93 |
| ▸ | RAB9A | P51151 | 1/20 | 0.93 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.93 |
| ▸ | MCL1 | Q07820 | 1/20 | 0.93 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.93 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.93 |
| ▸ | BCHE | P06276 | 13/20 | 0.79 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL782100 | 1.00 | KDM4E (0.93) | KDM4EMEN1RGS12NPC1USP2 | |
| Hydrochloric Acid SCHEMBL780409 | 1.00 | KDM4E (0.93) | KDM4EMEN1RGS12NPC1USP2 | |
| Hydrochloric Acid SCHEMBL6765792 | 1.00 | KDM4E (0.93) | KDM4EMEN1RGS12NPC1USP2 | |
| SCHEMBL9319117 | 0.98 | KDM4E (0.97) | KDM4EMEN1RGS12NPC1USP2 | |
| SCHEMBL1963218 | 0.98 | KDM4E (0.97) | KDM4EMEN1RGS12NPC1USP2 | |
| SCHEMBL1412685 | 0.98 | KDM4E (0.97) | KDM4EMEN1RGS12NPC1USP2 | |
| SCHEMBL29721510 | 0.98 | KDM4E (0.97) | KDM4EMEN1RGS12NPC1USP2 | |
| SCHEMBL1412766 | 0.98 | KDM4E (0.97) | KDM4EMEN1RGS12NPC1USP2 | |
| SCHEMBL4061564 | 0.98 | KDM4E (0.97) | KDM4EMEN1RGS12NPC1USP2 | |
| SCHEMBL1960573 | 0.98 | KDM4E (0.97) | KDM4EMEN1RGS12NPC1USP2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260022311-A1 | SEMICONDUCTOR SUBSTRATE CLEANING COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2026-01-22 | — | — | US | disclosed |
| CN-120129771-A | Aqueous composition for etching, etching method using same, and method for manufacturing semiconductor substrate | 三菱瓦斯化学株式会社 | 2025-06-10 | — | — | CN | disclosed |
| EP-4564403-A1 | SEMICONDUCTOR SUBSTRATE CLEANING COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-06-04 | — | — | EP | disclosed |
| WO-2025063222-A1 | COMPOSITION AND KIT, AND METHOD FOR REMOVING RESIST AND METHOD FOR MANUFACTURING ELECTRONIC SUBSTRATE EACH USING THESE | 三菱瓦斯化学株式会社 | 2025-03-27 | — | — | WO | disclosed |
| US-20240287385-A1 | ETCHING COMPOSITION FOR SEMICONDUCTOR SUBSTRATE FOR MEMORY ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE FOR MEMORY ELEMENT USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-08-29 | — | — | US | disclosed |
| US-20240170278-A1 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE FOR MEMORY ELEMENTS | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-05-23 | — | — | US | disclosed |
| WO-2024096006-A1 | AQUEOUS COMPOSITION FOR ETCHING, ETCHING METHOD USING SAME, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD | 三菱瓦斯化学株式会社 | 2024-05-10 | — | — | WO | disclosed |
| US-20240117277-A1 | COMPOSITION FOR CLEANING SEMICONDUCTOR SUBSTRATE, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-04-11 | — | — | US | disclosed |
| WO-2024024811-A1 | SEMICONDUCTOR SUBSTRATE CLEANING COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE USING SAME | 三菱瓦斯化学株式会社 | 2024-02-01 | — | — | WO | disclosed |
| EP-4293097-A1 | COMPOSITION FOR CLEANING SEMICONDUCTOR SUBSTRATE, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-20 | — | — | EP | disclosed |
| WO-2023277048-A1 | ETCHING COMPOSITION FOR SEMICONDUCTOR SUBSTRATE FOR MEMORY ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE FOR MEMORY ELEMENT USING SAME | 三菱瓦斯化学株式会社 | 2023-01-05 | — | — | WO | disclosed |
| WO-2022202646-A1 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE FOR MEMORY ELEMENTS | 三菱瓦斯化学株式会社 | 2022-09-29 | — | — | WO | disclosed |
| WO-2022172862-A1 | COMPOSITION FOR CLEANING SEMICONDUCTOR SUBSTRATE, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE | 三菱瓦斯化学株式会社 | 2022-08-18 | — | — | WO | disclosed |
| US-4331447-A | ADDING AN OIL FRACTION AS A BINDER TO AN AQUEOUS SLURRY | SANYO CHEMICAL INDUSTRIES, LTD. (JP) | 1982-05-25 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260022311-A1 | SEMICONDUCTOR SUBSTRATE CLEANING COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE USING SAME | SFN, SEM1, VAV1 | ACHE 1452/4885KDM4E 1797/4885MEN1 2925/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.