Known targets — ChEMBL curated mechanism
ABL1BMXBRAFBTKCHRNA4CHRNB2CSNK1EEGFRERBB2F10FLT1FLT3FLT4IGF1RINSRITKJAK3KDRKITOPRM1PARP1PARP2PDGFRBPIK3CDRAF1RETSLC18A2TECTXKdacAdacBdacCftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.45 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.45 |
| ▸ | LMNA | P02545 | 2/20 | 0.45 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.45 |
| ▸ | MAPT | P10636 | 2/20 | 0.45 |
| ▸ | HTT | P42858 | 2/20 | 0.45 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.45 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.45 |
| ▸ | CYP2D6 | P10635 | 3/20 | 0.44 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.44 |
| ▸ | GAA | P10253 | 2/20 | 0.42 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.41 |
| ▸ | DNMT1 | P26358 | 1/20 | 0.41 |
| ▸ | CA1 | P00915 | 3/20 | 0.40 |
| ▸ | CA2 | P00918 | 3/20 | 0.40 |
| ▸ | SNCA | P37840 | 1/20 | 0.40 |
| ▸ | TSHR | P16473 | 2/20 | 0.39 |
| ▸ | MMP1 | P03956 | 1/20 | 0.38 |
| ▸ | MMP2 | P08253 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5357534 | 1.00 | ALDH1A1 (0.45) | ALDH1A1SMN1; SMN2LMNATDP1MAPT | |
| SCHEMBL4446976 | 0.88 | SMN1; SMN2 (0.55) | ALDH1A1SMN1; SMN2LMNATDP1MAPT | |
| Sulfuric Acid SCHEMBL482696 | 0.84 | TRPA1 (0.43) | ALDH1A1SMN1; SMN2LMNATDP1MAPT | |
| Sulfuric Acid SCHEMBL3797183 | 0.84 | TRPA1 (0.43) | ALDH1A1SMN1; SMN2LMNATDP1MAPT | |
| SCHEMBL7741668 | 0.82 | CA1 (0.41) | ALDH1A1SMN1; SMN2LMNAMAPTCYP2D6 | |
| SCHEMBL27475054 | 0.81 | ALDH1A1 (0.46) | ALDH1A1SMN1; SMN2LMNATDP1MAPT | |
| O-Xylene SCHEMBL30856513 | 0.80 | SMN1; SMN2 (0.56) | ALDH1A1SMN1; SMN2LMNATDP1MAPT | |
| O-Xylene SCHEMBL5134935 | 0.80 | SMN1; SMN2 (0.56) | ALDH1A1SMN1; SMN2LMNATDP1MAPT | |
| Sulfuric Acid SCHEMBL15345267 | 0.79 | HTT (0.39) | ALDH1A1SMN1; SMN2LMNATDP1MAPT | |
| SCHEMBL10905332 | 0.79 | SMN1; SMN2 (0.50) | ALDH1A1SMN1; SMN2LMNATDP1MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11150556-B2 | Polymer of polyimide precursor, positive type photosensitive resin composition, negative type photosensitive resin composition, patterning process, method for forming cured film, interlayer insulating film, surface protective film, and electronic parts | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-10-19 | — | — | US | disclosed |
| US-20180275513-A1 | POLYMER OF POLYIMIDE PRECURSOR, POSITIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION, NEGATIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-09-27 | — | — | US | disclosed |
| US-9918921-B2 | Methods for shaping fibrous material and treatment compositions therefor | THE PROCTER & GAMBLE COMPANY (US) | 2018-03-20 | — | — | US | disclosed |
| US-9877559-B2 | Methods for shaping fibrous material and treatment compositions therefor | THE PROCTER & GAMBLE COMANY (US) | 2018-01-30 | — | — | US | disclosed |
| US-9751070-B2 | Structure modifying apparatus | THE PROCTER & GAMBLE COMPANY (US) | 2017-09-05 | — | — | US | disclosed |
| EP-3191184-A1 | STRUCTURE MODIFYING APPARATUS | The Procter and Gamble Company (US) | 2017-07-19 | — | — | EP | disclosed |
| EP-3191183-A1 | STRUCTURE MODIFYING APPARATUS | The Procter and Gamble Company (US) | 2017-07-19 | — | — | EP | disclosed |
| US-9675989-B2 | Structure modifying apparatus | THE PROCTER & GAMBLE COMPANY (US) | 2017-06-13 | — | — | US | disclosed |
| EP-3082748-A1 | METHODS FOR SHAPING FIBROUS MATERIAL AND TREATMENT COMPOSITIONS THEREFOR | The Procter & Gamble Company (US) | 2016-10-26 | — | — | EP | disclosed |
| EP-3082732-A1 | METHODS FOR SHAPING FIBROUS MATERIAL AND TREATMENT COMPOSITIONS THEREFOR | The Procter & Gamble Company (US) | 2016-10-26 | — | — | EP | disclosed |
| US-20060194143-A1 | Fluorine-containing polymerizable monomers, fluorine-containing polymer compounds, resist compositions using the same, and patterning process | CENTRAL GLASS COMPANY, LIMITED (JP) | 2006-08-31 | — | — | US | disclosed |
| US-6869744-B2 | Chemically amplified positive resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-03-22 | — | — | US | disclosed |
| US-6677101-B2 | REACTIVITY, RIGIDITY AND ADHESION TO THE SUBSTRATE, AND UNDERGOES A LOW DEGREE OF SWELLING DURING DEVELOPMENT; RESOLUTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-01-13 | — | — | US | disclosed |
| US-6613844-B2 | Polyhydroxystyrene type polymer containing acid labile groups, endcapped and optionally crosslinked; improved alkali dissolution contrast, sensitivity, resolution, plasma etching resistance, heat resistance, and reproducibility | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-09-02 | — | — | US | disclosed |
| US-20030013832-A1 | Novel styrene polymer, chemically amplified positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-01-16 | — | — | US | disclosed |
| US-20020196896-A1 | Exposure method, exposure apparatus, X-ray mask, semiconductor device and microstructure | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 2002-12-26 | — | — | US | disclosed |
| US-20020132182-A1 | Polymers, resist materials, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-09-19 | — | — | US | disclosed |
| US-20020042017-A1 | Chemically amplified positive resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-04-11 | — | — | US | disclosed |
| EP-1193553-A2 | Exposure method, exposure apparatus, x-ray mask, semiconductor device and microstructure | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 2002-04-03 | — | — | EP | disclosed |
| US-6284429-B1 | FOR FORMULATING PHOTORESISTS HAVING SENSITIVITY, RESOLUTION, ETCHING RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-09-04 | — | — | US | disclosed |