SCHEMBL1150833

SCHEMBL1150833

C=CC(=O)OCCOC(=O)CC(=O)OCCOC(=O)C=C

nearest known ligand 0.67

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 8/20 0.67
ALDH1A1 P00352 5/20 0.67
TP53 P04637 3/20 0.67
HIF1A Q16665 3/20 0.67
HSD17B10 Q99714 1/20 0.67
CYP3A4 P08684 2/20 0.60
HPGD P15428 1/20 0.54
THRB P10828 4/20 0.53
MAPK1 P28482 2/20 0.43
SMN1; SMN2 Q16637 1/20 0.43
MGAM O43451 1/20 0.39
GAA P10253 1/20 0.39
SI P14410 1/20 0.39
MGAM2 Q2M2H8 1/20 0.39
ATM Q13315 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
DGKA P23743 1/20 0.31
MAPT P10636 1/20 0.31
CACNA1B Q00975 1/20 0.31
APBA1 Q02410 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9155974 0.91 TSHR (0.68) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL139984 0.89 TSHR (0.59) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL93462 0.87 TSHR (0.84) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL13101230 0.87 TSHR (0.57) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL218670 0.87 TSHR (0.57) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL30604742 0.87 TSHR (0.84) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL303596 0.86 TSHR (0.67) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL17119709 0.86 TSHR (0.67) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL900042 0.85 TSHR (0.80) TSHRALDH1A1TP53HIF1AHSD17B10
Ethylene SCHEMBL1165263 0.85 TSHR (0.80) TSHRALDH1A1TP53HIF1AHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12015122-B2 Silicon-based energy storage devices with carboxylic ether, carboxylic acid based salt, or acrylate electrolyte containing electrolyte additives ENEVATE CORPORATION (US) 2024-06-18 US claimed
US-20210218059-A1 SILICON-BASED ENERGY STORAGE DEVICES WITH CARBOXYLIC ETHER, CARBOXYLIC ACID BASED SALT, OR ACRYLATE ELECTROLYTE CONTAINING ELECTROLYTE ADDITIVES ENEVATE CORPORATION 2021-07-15 US claimed
US-20190190070-A1 SILICON-BASED ENERGY STORAGE DEVICES WITH CARBOXYLIC ETHER, CARBOXYLIC ACID BASED SALT, OR ACRYLATE ELECTROLYTE CONTAINING ELECTROLYTE ADDITIVES ENEVATE CORPORATION 2019-06-20 US claimed
WO-2019113528-A1 SILICON-BASED ENERGY STORAGE DEVICES WITH CARBOXYLIC ETHER, CARBOXYLIC ACID BASED SALT, OR ACRYLATE ELECTROLYTE CONTAINING ELECTROLYTE ADDITIVES ENEVATE CORPORATION (US) 2019-06-13 WO claimed
US-20240429448-A1 Silicon-Based Energy Storage Devices With Carboxylic Ether, Carboxylic Acid Based Salt, or Acrylate Electrolyte Containing Electrolyte Additives ENEVATE CORP (US) 2024-12-26 US disclosed
US-12015122-B2 Silicon-based energy storage devices with carboxylic ether, carboxylic acid based salt, or acrylate electrolyte containing electrolyte additives ENEVATE CORPORATION (US) 2024-06-18 US disclosed
US-20210218059-A1 SILICON-BASED ENERGY STORAGE DEVICES WITH CARBOXYLIC ETHER, CARBOXYLIC ACID BASED SALT, OR ACRYLATE ELECTROLYTE CONTAINING ELECTROLYTE ADDITIVES ENEVATE CORPORATION 2021-07-15 US disclosed
US-20210218059-A1 SILICON-BASED ENERGY STORAGE DEVICES WITH CARBOXYLIC ETHER, CARBOXYLIC ACID BASED SALT, OR ACRYLATE ELECTROLYTE CONTAINING ELECTROLYTE ADDITIVES ENEVATE CORPORATION 2021-07-15 US disclosed
US-10978739-B2 Silicon-based energy storage devices with carboxylic ether, carboxylic acid based salt, or acrylate electrolyte containing electrolyte additives ENEVATE CORPORATION (US) 2021-04-13 US disclosed
EP-3346338-B1 METHOD FOR STRIPPING RESIST FILM FROM METAL PLATE AND METHOD FOR MANUFACTURING ETCHED METAL PLATE NIPPON STEEL NISSHIN CO LTD (JP) 2020-05-06 EP disclosed
US-20190190070-A1 SILICON-BASED ENERGY STORAGE DEVICES WITH CARBOXYLIC ETHER, CARBOXYLIC ACID BASED SALT, OR ACRYLATE ELECTROLYTE CONTAINING ELECTROLYTE ADDITIVES ENEVATE CORPORATION 2019-06-20 US disclosed
WO-2019113528-A1 SILICON-BASED ENERGY STORAGE DEVICES WITH CARBOXYLIC ETHER, CARBOXYLIC ACID BASED SALT, OR ACRYLATE ELECTROLYTE CONTAINING ELECTROLYTE ADDITIVES ENEVATE CORPORATION (US) 2019-06-13 WO disclosed
US-20110024392-A1 INK-JET INK COMPOSITION FOR ETCHING RESIST TOKYO PRINTING INK MFG. CO., LTD. (JP) 2011-02-03 US disclosed
EP-0756208-B1 Resin composition for electrophotographic toner, and toner comprising it MITSUI CHEMICALS INC (JP) 2001-04-11 EP disclosed
US-6011119-A RESIN COMPOSITION SHOWS EXCELLENT CHARGING CHARACTERISTICS WITHOUT A CHARGE CONTROL AGENT; HIGH AND LOW MOLECULAR WEIGHT ADDITION POLYMERS AT LEAST ONE OF WHICH IS FROM AN UNSATURATED ANHYDRIDE AND AN ACRYLOYLOXYALKYL DICARBOXYLIC ACID ESTER MITSUI CHEMICALS, INC. (JP) 2000-01-04 US disclosed
EP-0756208-A1 Resin composition for electrophotographic toner, and toner comprising it MITSUI TOATSU CHEMICALS, INCORPORATED (JP) 1997-01-29 EP disclosed
EP-0353030-B1 Photopolymerization initiator and photosensitive composition employing the same CANON KK (JP) 1995-03-15 EP disclosed
US-5124235-A Photopolymerization initiator and photosensitive composition employing the same CANON KABUSHIKI KAISHA (JP) 1992-06-23 US disclosed
EP-0353030-A2 Photopolymerization initiator and photosensitive composition employing the same CANON KABUSHIKI KAISHA (JP) 1990-01-31 EP disclosed
EP-0297583-A2 Photosensitive material and image forming method by use thereof CANON KABUSHIKI KAISHA (JP) 1989-01-04 EP disclosed