⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15518525 | 0.94 | — | — | |
| SCHEMBL42699 | 0.94 | — | — | |
| SCHEMBL1369334 | 0.88 | — | — | |
| SCHEMBL1370295 | 0.88 | — | — | |
| SCHEMBL664919 | 0.88 | — | — | |
| SCHEMBL404488 | 0.88 | — | — | |
| SCHEMBL644385 | 0.88 | — | — | |
| SCHEMBL356290 | 0.88 | — | — | |
| SCHEMBL9191513 | 0.88 | — | — | |
| SCHEMBL15105357 | 0.88 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9184061-B2 | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2015-11-10 | — | — | US | claimed |
| EP-1532290-B1 | SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM-CONTAINING LAYERS | MICRON TECHNOLOGY INC (US) | 2008-12-24 | — | — | EP | claimed |
| US-7112485-B2 | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2006-09-26 | — | — | US | claimed |
| US-20050160981-A9 | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2005-07-28 | — | — | US | claimed |
| EP-1532290-A2 | SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM-CONTAINING LAYERS | MICRON TECHNOLOGY, INC. (US) | 2005-05-25 | — | — | EP | claimed |
| WO-2004020691-A2 | SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM-CONTAINING LAYERS | MICRON TECHNOLOGY, INC. (US) | 2004-03-11 | — | — | WO | claimed |
| US-20040040501-A1 | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2004-03-04 | — | — | US | claimed |
| US-9184061-B2 | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2015-11-10 | — | — | US | disclosed |
| US-8563085-B2 | Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-10-22 | — | — | US | disclosed |
| US-20110183527-A1 | Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-07-28 | — | — | US | disclosed |
| US-20110045183-A1 | METHODS OF FORMING A LAYER, METHODS OF FORMING A GATE STRUCTURE AND METHODS OF FORMING A CAPACITOR | SAMSUNG ELECTRONICS CO., LTD. (KP) | 2011-02-24 | — | — | US | disclosed |
| US-20090130414-A1 | Preparation of A Metal-containing Film Via ALD or CVD Processes | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2009-05-21 | — | — | US | disclosed |
| EP-2058416-A2 | Preparation of a metal-containing film via ALD or CVD processes | Air Products and Chemicals, Inc. (US) | 2009-05-13 | — | — | EP | disclosed |
| US-7112485-B2 | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2006-09-26 | — | — | US | disclosed |
| US-20050160981-A9 | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2005-07-28 | — | — | US | disclosed |
| EP-1532290-A2 | SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM-CONTAINING LAYERS | MICRON TECHNOLOGY, INC. (US) | 2005-05-25 | — | — | EP | disclosed |
| WO-2004020691-A2 | SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM-CONTAINING LAYERS | MICRON TECHNOLOGY, INC. (US) | 2004-03-11 | — | — | WO | disclosed |
| US-20040040501-A1 | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2004-03-04 | — | — | US | disclosed |
| US-6350429-B1 | IMPREGNATION OF CATION OXIDE FRAMEWORK WITH LIQUID TO FORM PORES, SILICON OXIDE WITH METAL OXIDE, ALUMINUM OXIDE AND PHOSPHOROUS OXIDE | ABB LUMMUS GLOBAL INC. | 2002-02-26 | — | — | US | disclosed |
| US-6004527-A | HYDROTHERMAL SYNTHESIS OF LARGE PORE MOLECULAR SIEVES FROM MATERIALS, AT LEAST ONE OF WHICH CONTAINS AMORPHOUS FRAMEWORK STRUCTURE WHICH IS RETAINED IN PRODUCT | ABB LUMMUS GLOBAL INC. (US) | 1999-12-21 | — | — | US | disclosed |