SCHEMBL11913018

SCHEMBL11913018

CCC(C)(C)C(=O)OCCCC(O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.37

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
▸ CYP4F2 P78329 2/20 0.37
▸ CYP4A11 Q02928 2/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2735048 0.90 CYP4F2 (0.35) CYP4F2CYP4A11
SCHEMBL12108448 0.87 CYP4F2 (0.37) CYP4F2CYP4A11
SCHEMBL20280674 0.84 POLB (0.36) CYP4F2CYP4A11
SCHEMBL18898222 0.84 — —
SCHEMBL15113939 0.82 CYP4F2 (0.41) CYP4F2CYP4A11
SCHEMBL26834190 0.81 CYP4F2 (0.38) CYP4F2CYP4A11
SCHEMBL10067051 0.81 CYP4F2 (0.35) CYP4F2CYP4A11
SCHEMBL13995978 0.80 CYP4F2 (0.42) CYP4F2CYP4A11
SCHEMBL13667082 0.80 CYP4F2 (0.42) CYP4F2CYP4A11
SCHEMBL1627910 0.79 CYP4F2 (0.35) CYP4F2CYP4A11

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9665002-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-30 — — US disclosed
US-20160259242-A1 NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-09-08 — — US disclosed
US-9411225-B2 Photo acid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-09 — — US disclosed
US-9366958-B2 Photoacid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-14 — — US disclosed
US-20160131972-A1 NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-12 — — US disclosed
US-20160004155-A1 PHOTO ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-07 — — US disclosed
US-9223205-B2 Acid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-29 — — US disclosed
US-20150301449-A1 PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-22 — — US disclosed
US-9162967-B2 Sulfonium salt, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-20 — — US disclosed
US-9164384-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-20 — — US disclosed
US-20130224660-A1 PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 — — US disclosed
US-20130183621-A1 PATTERN FORMING PROCESS AND RESIST COMPOSTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-18 — — US disclosed
US-8323872-B2 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-04 — — US disclosed
US-8236482-B2 Photoresist compositions and methods of use in high index immersion lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-08-07 — — US disclosed
US-20110269072-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2011-11-03 — — US disclosed
US-8003309-B2 Photoresist compositions and methods of use in high index immersion lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-08-23 — — US disclosed
US-20090181321-A1 Photoresist Compositions and Methods of Use in High Index Immersion Lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-07-16 — — US disclosed
US-20090181322-A1 Photoresist Compositions and Methods of Use in High Index Immersion Lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-07-16 — — US disclosed
US-20070254235-A1 SELF-TOPCOATING RESIST FOR PHOTOLITHOGRAPHY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-11-01 — — US disclosed
US-20070003867-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-04 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160259242-A1 NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS LIFR, NHERF1, INSR CYP4F2 2285/4885CYP4A11 4072/4885
US-20160131972-A1 NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS LIFR, NHERF1, MIF CYP4F2 2140/4885CYP4A11 3901/4885
US-20150301449-A1 PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS PAG1, PARG, PAH CYP4F2 4252/4885CYP4A11 4479/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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