SCHEMBL12108448

SCHEMBL12108448

CCC(C)(C)C(=O)OCCCC(C)(O)C(F)(F)F

nearest known ligand 0.37

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
▸ CYP4F2 P78329 2/20 0.37
▸ CYP4A11 Q02928 2/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1627910 0.90 CYP4F2 (0.35) CYP4F2CYP4A11
SCHEMBL11913018 0.87 CYP4F2 (0.37) CYP4F2CYP4A11
SCHEMBL15113939 0.82 CYP4F2 (0.41) CYP4F2CYP4A11
SCHEMBL26834190 0.81 CYP4F2 (0.38) CYP4F2CYP4A11
SCHEMBL13995978 0.80 CYP4F2 (0.42) CYP4F2CYP4A11
SCHEMBL13667082 0.80 CYP4F2 (0.42) CYP4F2CYP4A11
SCHEMBL2735048 0.79 CYP4F2 (0.35) CYP4F2CYP4A11
SCHEMBL14649721 0.79 CYP4F2 (0.42) CYP4F2CYP4A11
SCHEMBL25667373 0.79 CYP4F2 (0.37) CYP4F2CYP4A11
SCHEMBL1628316 0.79 CYP4F2 (0.33) CYP4F2CYP4A11

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11754922-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 — — US disclosed
US-9926462-B2 Composition for forming liquid immersion upper layer film, and polymer JSR CORPORATION (JP) 2018-03-27 — — US disclosed
US-20170115570-A1 RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD AND POLYMER JSR CORPORATION (JP) 2017-04-27 — — US disclosed
US-20170073541-A1 COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM, AND POLYMER JSR CORPORATION (JP) 2017-03-16 — — US disclosed
US-9540535-B2 Composition for forming liquid immersion upper layer film, and polymer JSR CORPORATION (JP) 2017-01-10 — — US disclosed
US-20160185999-A1 RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD AND POLYMER JSR CORPORATION (JP) 2016-06-30 — — US disclosed
US-9250529-B2 Photoresist compositions and methods of use in high index immersion lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2016-02-02 — — US disclosed
US-8541160-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2013-09-24 — — US disclosed
US-20130217850-A1 COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM, AND POLYMER JSR CORPORATION (JP) 2013-08-22 — — US disclosed
US-20120288797-A1 PHOTORESIST COMPOSITIONS AND METHODS OF USE IN HIGH INDEX IMMERSION LITHOGRAPHY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-11-15 — — US disclosed
US-20110269072-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2011-11-03 — — US disclosed
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