SCHEMBL11922909

SCHEMBL11922909

CCC(C)c1ccc(OCC(=O)N(C)c2ccc(S(=O)(=O)O)cc2)cc1

nearest known ligand 0.53

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 3/20 0.53
▸ TSHR P16473 1/20 0.53
▸ MEN1 O00255 1/20 0.44
▸ KMT2A Q03164 1/20 0.44
▸ TDP1 Q9NUW8 1/20 0.44
▸ POLB P06746 5/20 0.43
▸ MLYCD O95822 2/20 0.42
▸ LMNA P02545 1/20 0.41
▸ MAPT P10636 2/20 0.41
▸ TP53 P04637 1/20 0.41
▸ HPGD P15428 1/20 0.41
▸ GAA P10253 1/20 0.40
▸ NPSR1 Q6W5P4 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14461742 0.90 ALDH1A1 (0.48) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL17175313 0.87 ALDH1A1 (0.49) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL11922895 0.85 ALDH1A1 (0.53) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL11922866 0.83 ALDH1A1 (0.53) ALDH1A1TSHRMEN1KMT2APOLB
SCHEMBL11922883 0.81 ALDH1A1 (0.58) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL14119428 0.81 ALDH1A1 (0.58) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL14464083 0.80 ALDH1A1 (0.55) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL18119993 0.79 MEN1 (0.56) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL16081293 0.79 MEN1 (0.56) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL11922886 0.78 POLB (0.60) ALDH1A1TSHRMEN1KMT2APOLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 — — US disclosed
US-20160018734-A1 PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, AND METHOD FOR PRODUCING ELECTRONIC DEVICE USING THEM, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-21 — — US disclosed
US-9235120-B2 Negative actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, resist-coated mask blanks, resist pattern forming method, and photomask FUJIFILM CORPORATION (JP) 2016-01-12 — — US disclosed
US-20150293446-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-15 — — US disclosed
US-9091927-B2 Positive resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition FUJIFILM CORPORATION (JP) 2015-07-28 — — US disclosed
US-20140178806-A1 NEGATIVE ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, AND PHOTOMASK FUJIFILM CORPORATION (JP) 2014-06-26 — — US disclosed
US-8673538-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-03-18 — — US disclosed
US-20140072905-A1 POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2014-03-13 — — US disclosed
US-8574814-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2013-11-05 — — US disclosed
US-20130029255-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 — — US disclosed
US-20130004888-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-03 — — US disclosed
US-20120202141-A1 CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-09 — — US disclosed
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