Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.53 |
| ▸ | POLB | P06746 | 2/20 | 0.53 |
| ▸ | GAA | P10253 | 2/20 | 0.53 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.52 |
| ▸ | HSP90AB1 | P08238 | 1/20 | 0.52 |
| ▸ | PDK1 | Q15118 | 1/20 | 0.52 |
| ▸ | PDK2 | Q15119 | 1/20 | 0.52 |
| ▸ | PDK3 | Q15120 | 1/20 | 0.52 |
| ▸ | PDK4 | Q16654 | 1/20 | 0.52 |
| ▸ | TSHR | P16473 | 1/20 | 0.50 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.48 |
| ▸ | TP53 | P04637 | 2/20 | 0.46 |
| ▸ | LTB4R2 | Q9NPC1 | 1/20 | 0.45 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.45 |
| ▸ | TRPM8 | Q7Z2W7 | 2/20 | 0.44 |
| ▸ | MEN1 | O00255 | 1/20 | 0.44 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.44 |
| ▸ | NPC1 | O15118 | 1/20 | 0.44 |
| ▸ | RAB9A | P51151 | 1/20 | 0.44 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19141832 | 0.89 | GAA (0.58) | ALDH1A1POLBGAATSHRTP53 | |
| SCHEMBL11922895 | 0.86 | ALDH1A1 (0.53) | ALDH1A1POLBGAAHSP90AA1HSP90AB1 | |
| SCHEMBL11922909 | 0.83 | ALDH1A1 (0.53) | ALDH1A1POLBGAATSHRNPSR1 | |
| SCHEMBL11922897 | 0.80 | GAA (0.48) | ALDH1A1POLBGAAHSP90AA1HSP90AB1 | |
| SCHEMBL14461742 | 0.76 | ALDH1A1 (0.48) | ALDH1A1POLBTSHRTP53SMN1; SMN2 | |
| SCHEMBL12016660 | 0.76 | ALDH1A1 (0.44) | ALDH1A1POLBTSHRSMN1; SMN2MEN1 | |
| SCHEMBL14119428 | 0.76 | ALDH1A1 (0.58) | ALDH1A1POLBTSHRSMN1; SMN2MEN1 | |
| SCHEMBL11922883 | 0.76 | ALDH1A1 (0.58) | ALDH1A1POLBGAATSHRNPSR1 | |
| SCHEMBL17175313 | 0.75 | ALDH1A1 (0.49) | ALDH1A1POLBHSP90AA1HSP90AB1PDK1 | |
| SCHEMBL14464083 | 0.75 | ALDH1A1 (0.55) | ALDH1A1HSP90AA1TSHRSMN1; SMN2MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9915870-B2 | Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device | FUJIFILM CORPORATION (JP) | 2018-03-13 | — | — | US | disclosed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-20170059990-A1 | RADIATION-SENSITIVE OR ACTINIC RAY-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, MASK BLANK, RESIST PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-03-02 | — | — | US | disclosed |
| US-20170059990-A1 | RADIATION-SENSITIVE OR ACTINIC RAY-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, MASK BLANK, RESIST PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-03-02 | — | — | US | disclosed |
| US-9563121-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition | FUJIFILM CORPORATION (JP) | 2017-02-07 | — | — | US | disclosed |
| US-9563121-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition | FUJIFILM CORPORATION (JP) | 2017-02-07 | — | — | US | disclosed |
| US-9551933-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9551933-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9500951-B2 | Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| US-8673538-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition | FUJIFILM CORPORATION (JP) | 2014-03-18 | — | — | US | disclosed |
| US-8673538-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition | FUJIFILM CORPORATION (JP) | 2014-03-18 | — | — | US | disclosed |
| US-20140072905-A1 | POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2014-03-13 | — | — | US | disclosed |
| US-8574814-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition | FUJIFILM CORPORATION (JP) | 2013-11-05 | — | — | US | disclosed |
| WO-2013147325-A1 | PATTERN FORMING METHOD, METHOD FOR SELECTING HEATING TEMPERATURE IN PATTERN FORMING METHOD, EXTREME ULTRAVIOLET-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-10-03 | — | — | WO | disclosed |
| WO-2013141395-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-09-26 | — | — | WO | disclosed |
| WO-2013081184-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN | FUJIFILM CORPORATION (JP) | 2013-06-06 | — | — | WO | disclosed |
| US-20130029255-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-31 | — | — | US | disclosed |
| US-20130004888-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20120202141-A1 | CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-08-09 | — | — | US | disclosed |