SCHEMBL11943527

SCHEMBL11943527

CC(C)CC(c1ccc(O)cc1)C(C)(C)C

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 9/20 0.46
ESR2 Q92731 7/20 0.46
PDCD1 Q15116 1/20 0.46
CD274 Q9NZQ7 1/20 0.46
CYP2C9 P11712 2/20 0.42
TDP1 Q9NUW8 2/20 0.42
LMNA P02545 2/20 0.42
CYP1A2 P05177 1/20 0.42
PGR P06401 1/20 0.42
CHRM2 P08172 1/20 0.42
CYP3A4 P08684 1/20 0.42
ADORA3 P0DMS8 1/20 0.42
AR P10275 1/20 0.42
CYP2D6 P10635 1/20 0.42
MAPT P10636 1/20 0.42
CHRM1 P11229 1/20 0.42
ALOX15 P16050 1/20 0.42
DRD1 P21728 1/20 0.42
TBXA2R P21731 1/20 0.42
PTGS1 P23219 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18903327 0.85 ESR1 (0.43) ESR1ESR2PDCD1CD274CYP2C9
SCHEMBL13161404 0.83 ESR1 (0.42) ESR1ESR2PDCD1CD274CYP2C9
SCHEMBL7050045 0.80 ESR1 (0.44) ESR1ESR2PDCD1CD274CYP2C9
SCHEMBL12956676 0.80 TDP1 (0.40) TDP1CYP3A4MAPTALDH1A1HIF1A
SCHEMBL14540127 0.79 SLC6A3 (0.46) LMNACHRM2CHRM1SLC6A2ADRA1A
SCHEMBL12086475 0.79 ESR1 (0.56) ESR1ESR2PDCD1CD274CYP2C9
SCHEMBL22211043 0.79 ALDH1A1 (0.41) ESR1ESR2PDCD1CD274CYP2C9
SCHEMBL19259213 0.78 ATM (0.42) TDP1LMNAMAPTALDH1A1SMN1; SMN2
SCHEMBL14227866 0.78 ALDH1A1 (0.46) TDP1CYP1A2CYP2D6SLC6A2CYP2C19
SCHEMBL14469724 0.78 ADRB1 (0.50) ESR1ESR2LMNACYP3A4DRD1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9761449-B2 Gap filling materials and methods TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2017-09-12 US disclosed
EP-2479611-A2 Chemically amplified positive resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2012-07-25 EP disclosed
EP-2244124-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2244126-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-1914070-B1 Image recording material and lithographic printing plate precursor FUJIFILM CORP (JP) 2009-10-21 EP disclosed
EP-1835341-B1 Positive resist composition and pattern forming method using the same FUJIFILM CORP (JP) 2009-06-24 EP disclosed
EP-1906248-A1 Resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2008-04-02 EP disclosed
EP-1764652-A2 Positive resist composition and pattern-forming method using the same FUJIFILM Corporation (JP) 2007-03-21 EP disclosed