Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR1 | P03372 | 6/20 | 0.48 |
| ▸ | ESR2 | Q92731 | 4/20 | 0.48 |
| ▸ | KMT2A | Q03164 | 8/20 | 0.47 |
| ▸ | MEN1 | O00255 | 7/20 | 0.47 |
| ▸ | CASP3 | P42574 | 2/20 | 0.47 |
| ▸ | SENP8 | Q96LD8 | 2/20 | 0.47 |
| ▸ | SENP7 | Q9BQF6 | 2/20 | 0.47 |
| ▸ | SENP6 | Q9GZR1 | 2/20 | 0.47 |
| ▸ | NPC1 | O15118 | 1/20 | 0.47 |
| ▸ | ELANE | P08246 | 6/20 | 0.45 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.44 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.44 |
| ▸ | MAPT | P10636 | 1/20 | 0.44 |
| ▸ | PKM | P14618 | 1/20 | 0.43 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.40 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.40 |
| ▸ | ATM | Q13315 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL20408457 | 0.97 | ESR1 (0.49) | ESR1ESR2KMT2AMEN1CASP3 | |
| SCHEMBL15447051 | 0.93 | ELANE (0.50) | ESR1ESR2KMT2AMEN1ELANE | |
| SCHEMBL20100782 | 0.89 | ELANE (0.44) | ESR1ESR2KMT2AMEN1CASP3 | |
| SCHEMBL20408456 | 0.88 | ELANE (0.43) | ESR1ESR2KMT2AMEN1CASP3 | |
| SCHEMBL15113875 | 0.87 | KMT2A (0.42) | ESR1ESR2KMT2AMEN1CASP3 | |
| SCHEMBL20408462 | 0.87 | ELANE (0.49) | KMT2AMEN1ELANEMAPTCYP3A4 | |
| SCHEMBL20408466 | 0.87 | AKR1C3 (0.47) | KMT2AMEN1CASP3SENP8SENP7 | |
| SCHEMBL6742426 | 0.87 | KMT2A (0.50) | ESR1ESR2KMT2AMEN1CASP3 | |
| SCHEMBL12419173 | 0.86 | KMT2A (0.45) | ESR1ESR2KMT2AMEN1CASP3 | |
| SCHEMBL18470653 | 0.86 | ELANE (0.44) | ESR1ESR2KMT2AMEN1ELANE |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 268 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-01-16 | — | — | US | disclosed |
| US-11835857-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11829068-B2 | Resist composition, method of forming resist pattern, compound, and resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-11822240-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11780946-B2 | Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-10 | — | — | US | disclosed |
| US-11762288-B2 | Resist composition, method of forming resist pattern, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11754926-B2 | Method of forming resist pattern, resist composition and method of producing the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11754922-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11747726-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-05 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-20100159404-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-24 | — | — | US | disclosed |
| US-20100159392-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-24 | — | — | US | disclosed |
| US-20100143830-A1 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
| US-20100055608-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-04 | — | — | US | disclosed |
| US-7670751-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-02 | — | — | US | disclosed |
| US-20100035178-A1 | Negative resist composition, method of forming resist pattern and polymeric compound | TOKYO OHKA KOGYO CO., LTD. | 2010-02-11 | — | — | US | disclosed |
| US-20090269696-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-29 | — | — | US | disclosed |
| US-20090226843-A1 | MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-10 | — | — | US | disclosed |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | PROXIMAL SYSTEMS CORPORATION | 2009-03-05 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11709425-B2 | Resist composition and method of forming resist pattern | RER1, RRS1, RXFP4 | ESR1 840/4885ESR2 202/4885KMT2A 2140/4885 |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, CRY1, CYP21A2 | ESR1 94/4885ESR2 453/4885KMT2A 3509/4885 |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ARSA, ACSL3, ASH2L | ESR1 1846/4885ESR2 1436/4885KMT2A 1543/4885 |
| US-20100055608-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ARSA, ACSL3, RAD54L | ESR1 2081/4885ESR2 2040/4885KMT2A 2036/4885 |
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | MRPS23, MRPS22, SLC11A2 | ESR1 1351/4885ESR2 806/4885KMT2A 2337/4885 |
| US-20100143830-A1 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS | TYK2, VRK2, ARSA | ESR1 1908/4885ESR2 2328/4885KMT2A 2407/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.