SCHEMBL12013261

SCHEMBL12013261

Cc1cnc(-c2cnc(-c3cnc(C)s3)s2)s1

nearest known ligand 0.41

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
NOS1 P29475 1/20 0.40
HCAR2 Q8TDS4 1/20 0.35
CYP11B1 P15538 1/20 0.33
CYP11B2 P19099 1/20 0.33
HDAC4 P56524 1/20 0.33
SYK P43405 2/20 0.33
ADORA2A P29274 2/20 0.33
SRC P12931 1/20 0.33
CDK2 P24941 1/20 0.33
ZAP70 P43403 1/20 0.33
ADORA1 P30542 1/20 0.33
FDPS P14324 1/20 0.33
AOC3 Q16853 2/20 0.31
CYP3A4 P08684 1/20 0.30
CYP2C9 P11712 1/20 0.30
HSD17B1 P14061 1/20 0.30
HSD17B2 P37059 1/20 0.30
NPSR1 Q6W5P4 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13325291 0.98 NOS1 (0.41) NOS1HCAR2CYP11B1CYP11B2HDAC4
SCHEMBL16522148 0.80 NPC1 (0.35) HCAR2CYP11B1CYP11B2HDAC4ADORA2A
SCHEMBL21335604 0.78 NOS1 (0.39) NOS1HDAC4SYKADORA2ASRC
SCHEMBL10442596 0.77 HCAR2 (0.46) NOS1HCAR2CYP11B1CYP11B2SYK
SCHEMBL119227 0.77
SCHEMBL10002194 0.77 NOS1 (0.55) NOS1HDAC4SYKADORA2ASRC
SCHEMBL20175446 0.76 NOS1 (0.44) NOS1HDAC4SYKADORA2ASRC
SCHEMBL12013263 0.75 HCAR2 (0.32) HCAR2CYP11B1CYP11B2
SCHEMBL10141290 0.74 NOS1 (0.43) NOS1HDAC4SYKADORA2ASRC
SCHEMBL15933073 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8252883-B2 Silicon cluster substituted with a conductive organic material; thin film transistor SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-08-28 US disclosed
US-8252883-B2 Silicon cluster substituted with a conductive organic material; thin film transistor SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-08-28 US disclosed
US-20080206479-A1 Organosilicon nanocluster, method of preparing the same and method of forming thin film using the same SAMSUNG ELECTRONICS CO., LTD 2008-08-28 US disclosed
US-20080206479-A1 Organosilicon nanocluster, method of preparing the same and method of forming thin film using the same SAMSUNG ELECTRONICS CO., LTD 2008-08-28 US disclosed