SCHEMBL1219045

SCHEMBL1219045

C=C(C)C(=O)OC1C2CC3(C#N)C(=O)OC1C3O2

nearest known ligand 0.31

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
▸ KDM4E B2RXH2 1/20 0.30
▸ NPC1 O15118 1/20 0.30
▸ POLB P06746 1/20 0.30
▸ MAPT P10636 1/20 0.30
▸ PKM P14618 1/20 0.30
▸ HTT P42858 1/20 0.30
▸ RECQL P46063 1/20 0.30
▸ RAB9A P51151 1/20 0.30
▸ ATM Q13315 1/20 0.30
▸ TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17166005 1.00 KDM4E (0.30) KDM4ENPC1POLBMAPTPKM
SCHEMBL12977713 0.88 — —
SCHEMBL22399763 0.88 — —
SCHEMBL76320 0.81 KDM4E (0.32) KDM4ENPC1POLBMAPTPKM
SCHEMBL1216386 0.80 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL1218587 0.80 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL14617250 0.79 — —
SCHEMBL12204602 0.79 HMGCR (0.32) —
SCHEMBL1219030 0.77 KDM4E (0.32) KDM4ENPC1POLBMAPTPKM
SCHEMBL21432112 0.77 KDM4E (0.30) KDM4ENPC1POLBMAPTPKM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 82 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 — — US disclosed
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 — — US disclosed
US-11829069-B2 Photoresist compositions and methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-11-28 — — US disclosed
US-11829069-B2 Photoresist compositions and methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-11-28 — — US disclosed
US-20230099348-A1 PHOTORESIST COMPOSITION COMPRISING AMIDE COMPOUND AND PATTERN FORMATION METHODS USING THE SAME DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2023-03-30 — — US disclosed
US-10766992-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-08 — — US disclosed
US-10719014-B2 Photoresists comprising amide component ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2020-07-21 — — US disclosed
US-10564542-B2 Photoresist compositions and methods DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2020-02-18 — — US disclosed
US-20190204743-A1 PHOTORESIST COMPOSITIONS AND METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2019-07-04 — — US disclosed
US-20180203352-A1 MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2018-07-19 — — US disclosed
US-20110244394-A1 METHOD FOR PRODUCING RESIN SOLUTION FOR PHOTORESIST, PHOTORESIST COMPOSITION, AND PATTERN-FORMING METHOD DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2011-10-06 — — US disclosed
US-20110065044-A1 POLYMER FOR LITHOGRAPHIC PURPOSES AND METHOD FOR PRODUCING SAME DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2011-03-17 — — US disclosed
US-20110040056-A1 PROCESS FOR PRODUCTION OF POLYMER DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2011-02-17 — — US disclosed
US-20100323296-A1 RESIN AND RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-23 — — US disclosed
US-20100323296-A1 RESIN AND RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-23 — — US disclosed
US-20100316954-A1 MONOMER HAVING LACTONE SKELETON, POLYMER COMPOUND AND PHOTORESIST COMPOSITION DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2010-12-16 — — US disclosed
US-20100297555-A1 MONOMER HAVING ELECTRON-WITHDRAWING SUBSTITUENT AND LACTONE SKELETON, POLYMERIC COMPOUND, AND PHOTORESIST COMPOSITION DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2010-11-25 — — US disclosed
US-20100297551-A1 PROCESS FOR PRODUCING PHOTORESIST POLYMERIC COMPOUNDS DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2010-11-25 — — US disclosed
US-20090011362-A1 PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2009-01-08 — — US disclosed
US-20090011362-A1 PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2009-01-08 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10564542-B2 Photoresist compositions and methods PARG, PNN, PARN KDM4E 1509/4885NPC1 4506/4885POLB 391/4885
US-20100297555-A1 MONOMER HAVING ELECTRON-WITHDRAWING SUBSTITUENT AND LACTONE SKELETON, POLYMERIC COMPOUND, AND PHOTORESIST COMPOSITION DCXR, RPS10, RRS1 KDM4E 860/4885NPC1 4387/4885POLB 2013/4885
US-10719014-B2 Photoresists comprising amide component ASPH, ALAD, SUN2 KDM4E 692/4885NPC1 4560/4885POLB 2181/4885
US-20100316954-A1 MONOMER HAVING LACTONE SKELETON, POLYMER COMPOUND AND PHOTORESIST COMPOSITION RRS1, CNKSR1, LSS KDM4E 1628/4885NPC1 4646/4885POLB 3393/4885
US-20180203352-A1 MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS MAP1LC3C, LCP1, PIN1 KDM4E 1748/4885NPC1 4411/4885POLB 2231/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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