SCHEMBL1220558

SCHEMBL1220558

O=[Si]([O-])[O-].O=[Si]([O-])[O-].O=[Si]([O-])[O-].O=[Si]([O-])[O-].O=[Si]([O-])[O-].[Ca+2].[Ga+3].[Nb+5]

nearest known ligand 0.00

Known targets — ChEMBL curated mechanism

GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHMGCRMMP1MMP13MMP7MMP8PTGS1PTGS2ileSpolrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17675347 0.94
SCHEMBL1220575 0.89
SCHEMBL1221616 0.89
SCHEMBL8006466 0.88
SCHEMBL305306 0.88
SCHEMBL876723 0.88
SCHEMBL149311 0.88
SCHEMBL3577 0.88
SCHEMBL30507 0.88
SCHEMBL16767580 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7886575-B2 High sensitivity acoustic wave microsensors based on stress effects DELAWARE CAPITAL FORMATION, INC. (US) 2011-02-15 US claimed
US-7569971-B2 Compensation of resonators for substrate and transducer asymmetry DELAWARE CAPITAL FORMATION, INC. (US) 2009-08-04 US claimed
WO-2009052347-A2 HIGH SENSITIVITY ACOUSTIC WAVE MICROSENSORS BASED ON STRESS EFFECTS DELAWARE CAPITAL FORMATION, INC. (US) 2009-04-23 WO claimed
US-20090085430-A1 COMPENSATION OF RESONATORS FOR SUBSTRATE AND TRANSDUCER ASSYMETRY DELAWARE CAPITAL FORMATION, INC. (US) 2009-04-02 US claimed
US-20080163694-A1 HIGH SENSITIVITY ACOUSTIC WAVE MICROSENSORS BASED ON STRESS EFFECTS DELAWARE CAPITAL FORMATION INCORPORATED (US) 2008-07-10 US claimed
US-7886575-B2 High sensitivity acoustic wave microsensors based on stress effects DELAWARE CAPITAL FORMATION, INC. (US) 2011-02-15 US disclosed
US-7569971-B2 Compensation of resonators for substrate and transducer asymmetry DELAWARE CAPITAL FORMATION, INC. (US) 2009-08-04 US disclosed
US-20090085430-A1 COMPENSATION OF RESONATORS FOR SUBSTRATE AND TRANSDUCER ASSYMETRY DELAWARE CAPITAL FORMATION, INC. (US) 2009-04-02 US disclosed
US-20080163694-A1 HIGH SENSITIVITY ACOUSTIC WAVE MICROSENSORS BASED ON STRESS EFFECTS DELAWARE CAPITAL FORMATION INCORPORATED (US) 2008-07-10 US disclosed