Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TP53 | P04637 | 1/20 | 0.42 |
| ▸ | HBB | P68871 | 1/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.42 |
| ▸ | DHFR | P00374 | 1/20 | 0.33 |
| ▸ | FAAH | O00519 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL464610 | 0.83 | SMN1; SMN2 (0.58) | TP53HBBSMN1; SMN2DHFR | |
| SCHEMBL16880352 | 0.83 | SMN1; SMN2 (0.58) | TP53HBBSMN1; SMN2DHFR | |
| Acrylic Acid SCHEMBL28073530 | 0.80 | TP53 (0.43) | TP53HBBSMN1; SMN2DHFR | |
| SCHEMBL2340342 | 0.80 | TP53 (0.46) | TP53HBBSMN1; SMN2DHFR | |
| SCHEMBL1714962 | 0.77 | ALDH1A1 (0.46) | TP53HBBSMN1; SMN2DHFR | |
| SCHEMBL23466918 | 0.76 | TP53 (0.42) | TP53HBBSMN1; SMN2DHFR | |
| SCHEMBL23466935 | 0.76 | TP53 (0.42) | TP53HBBSMN1; SMN2DHFR | |
| SCHEMBL5070119 | 0.76 | ALDH1A1 (0.53) | TP53HBBSMN1; SMN2 | |
| SCHEMBL1715101 | 0.76 | TP53 (0.48) | TP53HBBSMN1; SMN2DHFR | |
| SCHEMBL174248 | 0.74 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12072631-B2 | Resist underlayer film-forming composition and method for forming resist pattern using the same | NISSAN CHEMICAL CORPORATION (JP) | 2024-08-27 | — | — | US | disclosed |
| CN-112400135-B | Liquid crystal aligning agent, liquid crystal alignment film, liquid crystal element, and method for manufacturing liquid crystal element | JSR株式会社 | 2024-03-29 | — | — | CN | disclosed |
| CN-111095107-B | High-low difference substrate coating composition containing compound having curable functional group | 日产化学株式会社 | 2023-11-07 | — | — | CN | disclosed |
| CN-111556981-B | Liquid crystal aligning agent, liquid crystal alignment film, liquid crystal element, and method for manufacturing liquid crystal element | JSR株式会社 | 2023-07-07 | — | — | CN | disclosed |
| US-11372330-B2 | Anti-reflective coating forming composition containing reaction product of isocyanuric acid compound with benzoic acid compound | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2022-06-28 | — | — | US | disclosed |
| WO-2022075339-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING REACTION PRODUCT OF TRIFUNCTIONAL COMPOUND | 日産化学株式会社 | 2022-04-14 | — | — | WO | disclosed |
| US-20210397090-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME | NISSAN CHEMICAL CORPORATION (JP) | 2021-12-23 | — | — | US | disclosed |
| WO-2020166580-A1 | METHOD FOR PRODUCING POLYMER | 日産化学株式会社 | 2020-08-20 | — | — | WO | disclosed |
| US-10437150-B2 | Composition for forming resist underlayer film with reduced outgassing | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2019-10-08 | — | — | US | disclosed |
| EP-2157614-B1 | GATE INSULATING FILM FORMING AGENT FOR THIN-FILM TRANSISTOR | NISSAN CHEMICAL IND LTD (JP) | 2017-03-01 | — | — | EP | disclosed |
| CN-101268419-A | Composition for forming antireflection film containing reaction product of isocyanuric acid compound and benzoic acid compound | NISSAN CHEMICAL INDUSTRY LTD (JP) | 2008-09-17 | — | — | CN | disclosed |
| US-7425399-B2 | Composition for forming anti-reflective coating for use in lithography | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2008-09-16 | — | — | US | disclosed |
| US-20080206680-A1 | Composition for forming anti-reflective coating for use in lithography | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2008-08-28 | — | — | US | disclosed |
| EP-1939688-A1 | COMPOSITION FOR ANTIREFLECTION FILM FORMATION, COMPRISING PRODUCT OF REACTION BETWEEN ISOCYANURIC ACID COMPOUND AND BENZOIC ACID COMPOUND | Nissan Chemical Industries, Ltd. (JP) | 2008-07-02 | — | — | EP | disclosed |
| US-20080107997-A1 | Anti-Reflective Coating Containing Sulfur Atom | NISSAN CHEMICAL INDUSTRIES LTD. (JP) | 2008-05-08 | — | — | US | disclosed |
| EP-1876495-A1 | COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY | Nissan Chemical Industries, Ltd. (JP) | 2008-01-09 | — | — | EP | disclosed |
| EP-1813987-A1 | SULFONIC-ESTER-CONTAINING COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY | Nissan Chemical Industries, Ltd. (JP) | 2007-08-01 | — | — | EP | disclosed |
| EP-1757985-A1 | ANTIREFLECTIVE FILM CONTAINING SULFUR ATOM | Nissan Chemical Industries, Ltd. (JP) | 2007-02-28 | — | — | EP | disclosed |
| US-20060290429-A1 | Composition form forming anti-reflective coating for use in lithography | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2006-12-28 | — | — | US | disclosed |
| EP-1560070-A1 | COMPOSITION FOR FORMING ANTIREFLECTION FILM FOR LITHOGRAPHY | Nissan Chemical Industries, Ltd. (JP) | 2005-08-03 | — | — | EP | disclosed |