SCHEMBL2340342

SCHEMBL2340342

CCCC1CO1.O=c1[nH]c(=O)n(CC2CO2)c(=O)[nH]1

nearest known ligand 0.46

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.46
HBB P68871 1/20 0.46
SMN1; SMN2 Q16637 1/20 0.46
ALDH1A1 P00352 2/20 0.36
DHFR P00374 1/20 0.35
KDM4E B2RXH2 1/20 0.32
NPSR1 Q6W5P4 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1714962 0.90 ALDH1A1 (0.46) TP53HBBSMN1; SMN2ALDH1A1DHFR
SCHEMBL5070119 0.89 ALDH1A1 (0.53) TP53HBBSMN1; SMN2ALDH1A1KDM4E
SCHEMBL16880352 0.88 SMN1; SMN2 (0.58) TP53HBBSMN1; SMN2ALDH1A1DHFR
SCHEMBL464610 0.88 SMN1; SMN2 (0.58) TP53HBBSMN1; SMN2ALDH1A1DHFR
SCHEMBL1715101 0.86 TP53 (0.48) TP53HBBSMN1; SMN2ALDH1A1DHFR
SCHEMBL23466935 0.83 TP53 (0.42) TP53HBBSMN1; SMN2ALDH1A1DHFR
SCHEMBL23466918 0.83 TP53 (0.42) TP53HBBSMN1; SMN2DHFR
SCHEMBL123343 0.80 TP53 (0.42) TP53HBBSMN1; SMN2DHFR
SCHEMBL1715736 0.79 TP53 (0.44) TP53HBBSMN1; SMN2ALDH1A1DHFR
SCHEMBL1715028 0.77 KMT2A (0.44) TP53HBBSMN1; SMN2DHFR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122095316-A Composition for forming resist underlayer film 2026-05-26 CN disclosed
CN-114746468-B Method for producing polymer 日产化学株式会社 2024-09-13 CN disclosed
EP-1813987-B1 SULFONIC-ESTER-CONTAINING COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2011-08-24 EP disclosed
EP-1560070-B1 COMPOSITION FOR FORMING ANTIREFLECTION FILM FOR LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2009-12-30 EP disclosed
US-7632626-B2 a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-12-15 US disclosed
US-7595144-B2 Sulfonate-containing anti-reflective coating forming composition for lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-09-29 US disclosed
US-20080268379-A1 a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-10-30 US disclosed
US-7425399-B2 Composition for forming anti-reflective coating for use in lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-09-16 US disclosed
US-20080003524-A1 Sulfonate-Containing Anti-Reflective Coating Forming Composition for Lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-01-03 US disclosed
EP-1813987-A1 SULFONIC-ESTER-CONTAINING COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2007-08-01 EP disclosed
US-20060290429-A1 Composition form forming anti-reflective coating for use in lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2006-12-28 US disclosed
EP-1560070-A1 COMPOSITION FOR FORMING ANTIREFLECTION FILM FOR LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2005-08-03 EP disclosed