SCHEMBL12376686

SCHEMBL12376686

C=Cc1ccc(C(=O)Oc2ccc([S+](c3ccccc3)c3ccccc3)cc2)cc1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 13/20 0.51
MAPT P10636 9/20 0.51
RAB9A P51151 1/20 0.51
PARP10 Q53GL7 1/20 0.49
KDM4E B2RXH2 4/20 0.46
GAA P10253 1/20 0.46
MEN1 O00255 5/20 0.44
ALDH1A1 P00352 3/20 0.44
HPGD P15428 2/20 0.44
HSP90AA1 P07900 2/20 0.44
TDP1 Q9NUW8 2/20 0.43
L3MBTL1 Q9Y468 1/20 0.43
PKM P14618 1/20 0.43
GFER P55789 1/20 0.43
LMNA P02545 1/20 0.42
PRSS1 P07477 1/20 0.41
ACR P10323 1/20 0.41
TMPRSS15 P98073 1/20 0.41
CTDSP1 Q9GZU7 1/20 0.41
ELANE P08246 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1143616 0.86 KMT2A (0.66) KMT2AMAPTRAB9APARP10KDM4E
SCHEMBL5200353 0.86 MAPT (0.57) KMT2AMAPTRAB9APARP10KDM4E
SCHEMBL3198779 0.85 PARP10 (0.61) KMT2AMAPTRAB9APARP10KDM4E
SCHEMBL3208782 0.85 PARP10 (0.61) KMT2AMAPTRAB9APARP10KDM4E
SCHEMBL103296 0.84 KMT2A (0.54) KMT2AMAPTRAB9APARP10KDM4E
SCHEMBL16812851 0.84 KMT2A (0.54) KMT2AMAPTRAB9APARP10KDM4E
SCHEMBL3201074 0.83 PARP10 (0.62) KMT2AMAPTRAB9APARP10KDM4E
Sulfuric Acid SCHEMBL15671146 0.81 KMT2A (0.59) KMT2AMAPTRAB9APARP10KDM4E
SCHEMBL1088035 0.80 KMT2A (0.51) KMT2AMAPTRAB9APARP10KDM4E
SCHEMBL1088940 0.80 KMT2A (0.51) KMT2AMAPTRAB9APARP10KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-20170226250-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
US-20170226250-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
US-20170205709-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-20 US disclosed
US-20170205709-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-20 US disclosed
US-20170184962-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184964-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184963-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184963-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20140377706-A1 DEVELOPER FOR PHOTOSENSITIVE RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-25 US disclosed
US-20140370441-A1 DEVELOPER FOR PHOTOSENSITIVE RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-18 US disclosed
US-8911929-B2 Developer and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-16 US disclosed
US-20140315131-A1 DEVELOPER AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-23 US disclosed
US-20140178818-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140141377-A1 DEVELOPER AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-05-22 US disclosed
US-8691490-B2 Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-08 US disclosed
US-20140080064-A1 RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-03-20 US disclosed
US-20140080055-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-03-20 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RPS4Y1, ETV6, RPS4X KMT2A 1677/4885MAPT 3052/4885RAB9A 230/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.