Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.43 |
| ▸ | RXFP1 | Q9HBX9 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 3/20 | 0.32 |
| ▸ | MEN1 | O00255 | 2/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.31 |
| ▸ | ABL1 | P00519 | 1/20 | 0.30 |
| ▸ | TSHR | P16473 | 1/20 | 0.30 |
| ▸ | RIN1 | Q13671 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12376743 | 0.93 | NPSR1 (0.42) | NPSR1RXFP1ALDH1A1L3MBTL1MEN1 | |
| SCHEMBL18775888 | 0.88 | NPSR1 (0.47) | NPSR1RXFP1ALDH1A1L3MBTL1MEN1 | |
| SCHEMBL16018734 | 0.88 | NPSR1 (0.41) | NPSR1RXFP1ALDH1A1L3MBTL1MEN1 | |
| SCHEMBL12376741 | 0.86 | NPSR1 (0.47) | NPSR1RXFP1ALDH1A1L3MBTL1MEN1 | |
| SCHEMBL26312816 | 0.84 | NPSR1 (0.38) | NPSR1RXFP1 | |
| SCHEMBL26312820 | 0.84 | NPSR1 (0.38) | NPSR1ALDH1A1LMNA | |
| SCHEMBL23746955 | 0.84 | NPSR1 (0.43) | NPSR1RXFP1ALDH1A1L3MBTL1MEN1 | |
| SCHEMBL26312824 | 0.84 | NPSR1 (0.40) | NPSR1RXFP1ALDH1A1 | |
| SCHEMBL12376770 | 0.83 | NPSR1 (0.43) | NPSR1RXFP1ALDH1A1L3MBTL1MEN1 | |
| SCHEMBL16020889 | 0.83 | NPSR1 (0.39) | NPSR1RXFP1ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230305398-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230296980-A1 | RESIST MATERIAL AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-20230296981-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-20230251573-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-10 | — | — | US | disclosed |
| US-20230251573-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-10 | — | — | US | disclosed |
| US-20230251572-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-10 | — | — | US | disclosed |
| US-20230251572-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-10 | — | — | US | disclosed |
| US-11709427-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-11709427-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-20230132653-A1 | MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-9310683-B2 | Monomer, polymer, positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-12 | — | — | US | disclosed |
| US-8841061-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-23 | — | — | US | disclosed |
| US-8808966-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-19 | — | — | US | disclosed |
| US-8691490-B2 | Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-08 | — | — | US | disclosed |
| US-8574817-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-11-05 | — | — | US | disclosed |
| US-20130288180-A1 | MONOMER, POLYMER, POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-10-31 | — | — | US | disclosed |
| US-20130084528-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20130084529-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20130084527-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20110189607-A1 | NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11709427-B2 | Positive resist composition and pattern forming process | EWSR1, PARG, VIM | NPSR1 2118/4885RXFP1 3419/4885ALDH1A1 3639/4885 |
| US-20110189607-A1 | NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | RPS4Y1, ETV6, RPS4X | NPSR1 1114/4885RXFP1 1013/4885ALDH1A1 4540/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.