Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX1 | P07099 | 1/20 | 0.48 |
| ▸ | SLC1A3 | P43003 | 1/20 | 0.48 |
| ▸ | SLC1A2 | P43004 | 1/20 | 0.48 |
| ▸ | SLC1A1 | P43005 | 1/20 | 0.48 |
| ▸ | ATM | Q13315 | 1/20 | 0.47 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.46 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.46 |
| ▸ | MEN1 | O00255 | 2/20 | 0.46 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.46 |
| ▸ | PARP10 | Q53GL7 | 1/20 | 0.46 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.45 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.45 |
| ▸ | TACR1 | P25103 | 1/20 | 0.44 |
| ▸ | MME | P08473 | 1/20 | 0.44 |
| ▸ | ACE | P12821 | 1/20 | 0.44 |
| ▸ | CPA1 | P15085 | 1/20 | 0.44 |
| ▸ | ACE2 | Q9BYF1 | 1/20 | 0.44 |
| ▸ | CDYL | Q9Y232 | 1/20 | 0.44 |
| ▸ | CTNNB1 | P35222 | 1/20 | 0.43 |
| ▸ | FFAR1 | O14842 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8083878 | 0.87 | SLC1A3 (0.52) | EPHX1SLC1A3SLC1A2SLC1A1ATM | |
| SCHEMBL13292524 | 0.87 | MTNR1A (0.43) | EPHX1SLC1A3SLC1A2SLC1A1ATM | |
| SCHEMBL8737610 | 0.84 | CDC25B (0.39) | KMT2AMEN1ALDH1A1 | |
| SCHEMBL18671842 | 0.84 | EPHX1 (0.47) | EPHX1SLC1A3SLC1A2SLC1A1ATM | |
| SCHEMBL23645082 | 0.83 | SLC1A3 (0.56) | EPHX1SLC1A3SLC1A2SLC1A1ATM | |
| SCHEMBL7325136 | 0.82 | KMT2A (0.49) | EPHX1SLC1A3SLC1A2SLC1A1ATM | |
| SCHEMBL8737840 | 0.81 | IDO1 (0.41) | KMT2AMEN1L3MBTL1KDM4EALDH1A1 | |
| SCHEMBL12084564 | 0.80 | EPHX1 (0.49) | EPHX1ATMTDP1KMT2AMEN1 | |
| SCHEMBL25034482 | 0.80 | ATM (0.57) | EPHX1SLC1A3SLC1A2SLC1A1ATM | |
| SCHEMBL8400366 | 0.80 | EPHX1 (0.51) | EPHX1SLC1A3SLC1A2SLC1A1ATM |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180039175-A1 | NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-9740098-B2 | Chemically amplified negative resist composition using novel onium salt and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9604921-B2 | Sulfonium salt, resist composition and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-03-28 | — | — | US | disclosed |
| US-20160299428-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-9436083-B2 | Chemically-amplified negative resist composition and resist patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9329476-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20160090355-A1 | SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-03-31 | — | — | US | disclosed |
| US-20150268556-A1 | CHEMICALLY-AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-24 | — | — | US | disclosed |
| US-20150198877-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-16 | — | — | US | disclosed |
| US-20110171579-A1 | NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SLC11A2, POLR2B, POLI | EPHX1 4549/4885SLC1A3 3706/4885SLC1A2 2910/4885 |
| US-20160090355-A1 | SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | ETV6, ETV1, EIF2B3 | EPHX1 2811/4885SLC1A3 1313/4885SLC1A2 1503/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.