SCHEMBL12459981

SCHEMBL12459981

Cc1ccc(SC(C)(C)c2ccccc2)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KIF11 P52732 5/20 0.41
▸ TSHR P16473 2/20 0.40
▸ LMNA P02545 2/20 0.40
▸ ALOX12 P18054 1/20 0.40
▸ ACHE P22303 1/20 0.40
▸ MAPK1 P28482 1/20 0.37
▸ MEN1 O00255 4/20 0.36
▸ KMT2A Q03164 4/20 0.36
▸ MAPT P10636 2/20 0.36
▸ NPSR1 Q6W5P4 2/20 0.36
▸ HKDC1 Q2TB90 1/20 0.36
▸ TDP1 Q9NUW8 1/20 0.36
▸ L3MBTL1 Q9Y468 1/20 0.36
▸ HPGD P15428 2/20 0.35
▸ MLYCD O95822 1/20 0.35
▸ ALDH1A1 P00352 3/20 0.35
▸ NFKB1 P19838 2/20 0.35
▸ NFKB2 Q00653 2/20 0.35
▸ RELA Q04206 2/20 0.35
▸ TAAR1 Q96RJ0 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13299808 0.92 TSHR (0.44) KIF11TSHRLMNAALOX12ACHE
SCHEMBL20457552 0.87 ALDH1A1 (0.40) TSHRMAPK1KMT2AMAPTHPGD
SCHEMBL13299807 0.87 MAPK1 (0.42) TSHRMAPK1KMT2AMAPTHPGD
SCHEMBL13558184 0.83 ALDH1A1 (0.42) LMNAMAPK1MAPTHPGDALDH1A1
SCHEMBL13558183 0.83 TSHR (0.39) KIF11TSHRLMNAMAPK1MEN1
SCHEMBL19054678 0.83 KIF11 (0.40) KIF11LMNAMAPK1MEN1KMT2A
SCHEMBL11555218 0.82 ESR2 (0.55) TSHRLMNAMAPK1KMT2AMAPT
SCHEMBL21365455 0.82 MAPK1 (0.35) TSHRMAPK1KMT2AMAPTALDH1A1
SCHEMBL14600422 0.81 KIF11 (0.50) KIF11TSHRLMNAALOX12ACHE
SCHEMBL13299811 0.79 KIF11 (0.45) KIF11TSHRLMNAALOX12ACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023181856-A1 COMPOUND, PHOTOSENSITIVE COMPOSITION, AND METHOD FOR FORMING PATTERN 三菱ケミカル株式会社 2023-09-28 — — WO disclosed
WO-2023181855-A1 PHOTOSENSITIVE COMPOSITION AND PATTERN FORMATION METHOD 三菱ケミカル株式会社 2023-09-28 — — WO disclosed
US-10303058-B2 Pattern forming method, treating agent, electronic device, and method for manufacturing the same FUJIFILM CORPORATION (JP) 2019-05-28 — — US disclosed
US-9829796-B2 Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2017-11-28 — — US disclosed
US-9810981-B2 Pattern formation method, etching method, electronic device manufacturing method, and electronic device FUJIFILM CORPORATION (JP) 2017-11-07 — — US disclosed
US-20170097565-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-04-06 — — US disclosed
US-20170059990-A1 RADIATION-SENSITIVE OR ACTINIC RAY-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, MASK BLANK, RESIST PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-03-02 — — US disclosed
US-20160240816-A1 LAMINATE, KIT FOR MANUFACTURING ORGANIC SEMICONDUCTOR, AND RESIST COMPOSITION FOR MANUFACTURING ORGANIC SEMICONDUCTOR FUJIFILM CORPORATION (JP) 2016-08-18 — — US disclosed
US-20160077440-A1 PATTERN PEELING METHOD, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME FUJIFILM CORPORATION (JP) 2016-03-17 — — US disclosed
US-20160070174-A1 PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-03-10 — — US disclosed
US-8753802-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-06-17 — — US disclosed
US-20130045365-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-02-21 — — US disclosed
WO-2012173282-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-12-20 — — WO disclosed
US-20120273924-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-11-01 — — US disclosed
WO-2011093520-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2011-08-04 — — WO disclosed
US-20110159433-A1 PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-06-30 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110159433-A1 PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION SUN2, LCP1, PHYKPL KIF11 3939/4885TSHR 4097/4885LMNA 1348/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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