Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NPC1 | O15118 | 1/20 | 0.33 |
| ▸ | RAB9A | P51151 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.31 |
| ▸ | PSMB5 | P28074 | 1/20 | 0.31 |
| ▸ | ELANE | P08246 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3661359 | 0.89 | — | — | |
| SCHEMBL1584751 | 0.88 | NPC1 (0.33) | NPC1RAB9AALDH1A1CYP3A4PSMB5 | |
| SCHEMBL1585575 | 0.84 | JAK2 (0.31) | — | |
| SCHEMBL2270492 | 0.83 | ALDH1A1 (0.34) | NPC1RAB9AALDH1A1CYP3A4PSMB5 | |
| SCHEMBL2101945 | 0.81 | ALDH1A1 (0.33) | ALDH1A1CYP3A4PSMB5ELANE | |
| SCHEMBL6432630 | 0.81 | ALDH1A1 (0.33) | ALDH1A1CYP3A4PSMB5ELANE | |
| SCHEMBL2275575 | 0.78 | PSMB5 (0.32) | PSMB5 | |
| SCHEMBL2101831 | 0.77 | TYMP (0.32) | ALDH1A1CYP3A4ELANE | |
| SCHEMBL3166128 | 0.76 | JAK2 (0.33) | PSMB5 | |
| SCHEMBL27749162 | 0.71 | HDAC1 (0.31) | ALDH1A1CYP3A4PSMB5 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7799705-B1 | Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups | NOVELLUS SYSTEMS, INC. (US) | 2010-09-21 | — | — | US | claimed |
| US-7473653-B1 | Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups | NOVELLUS SYSTEMS, INC. (US) | 2009-01-06 | — | — | US | claimed |
| US-7241704-B1 | Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups | NOVELLUS SYSTEMS, INC. (US) | 2007-07-10 | — | — | US | claimed |
| US-20210193508-A1 | METHOD OF FORMING MATERIAL FILM, INTEGRATED CIRCUIT DEVICE, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-06-24 | — | — | US | disclosed |
| US-20160138160-A1 | REACTIVE ULTRAVIOLET THERMAL PROCESSING OF LOW DIELECTRIC CONSTANT MATERIALS | LAM RESEARCH CORPORATION | 2016-05-19 | — | — | US | disclosed |
| US-20160042943-A1 | LOW-K DIELECTRIC FILM FORMATION | LAM RESEARCH CORPORATION | 2016-02-11 | — | — | US | disclosed |
| US-8968458-B2 | Composition for resist underlayer film and process for producing same | JSR CORPORATION (JP) | 2015-03-03 | — | — | US | disclosed |
| US-8889233-B1 | Method for reducing stress in porous dielectric films | NOVELLUS SYSTEMS, INC. (US) | 2014-11-18 | — | — | US | disclosed |
| US-8808446-B2 | Composition for resist underlayer film and process for producing same | JSR CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| US-20140080324-A1 | MULTI-STATION SEQUENTIAL CURING OF DIELECTRIC FILMS | NOVELLUS SYSTEMS, INC. (US) | 2014-03-20 | — | — | US | disclosed |
| US-8454750-B1 | Multi-station sequential curing of dielectric films | NOVELLUS SYSTEMS, INC. (US) | 2013-06-04 | — | — | US | disclosed |
| US-20100151384-A1 | COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME | JSR CORPORATION (JP) | 2010-06-17 | — | — | US | disclosed |
| US-20090239390-A1 | METHODS FOR PRODUCING LOW STRESS POROUS AND CDO LOW-K DIELECTRIC MATERIALS USING PRECURSORS WITH ORGANIC FUNCTIONAL GROUPS | NOVELLUS SYSTEMS, INC. (US) | 2009-09-24 | — | — | US | disclosed |
| US-20090050020-A1 | COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME | JSR CORPORATION (JP) | 2009-02-26 | — | — | US | disclosed |
| US-7479191-B1 | Method for endpointing CVD chamber cleans following ultra low-k film treatments | NOVELLUS SYSTEMS, INC. (US) | 2009-01-20 | — | — | US | disclosed |
| US-7473653-B1 | Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups | NOVELLUS SYSTEMS, INC. (US) | 2009-01-06 | — | — | US | disclosed |
| EP-1855159-A1 | COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME | JSR Corporation (JP) | 2007-11-14 | — | — | EP | disclosed |
| US-7265061-B1 | Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties | NOVELLUS SYSTEMS, INC. (US) | 2007-09-04 | — | — | US | disclosed |
| US-7241704-B1 | Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups | NOVELLUS SYSTEMS, INC. (US) | 2007-07-10 | — | — | US | disclosed |
| US-7208389-B1 | Method of porogen removal from porous low-k films using UV radiation | NOVELLUS SYSTEMS, INC. (US) | 2007-04-24 | — | — | US | disclosed |