SCHEMBL2275575

SCHEMBL2275575

CCO[Si](C)(C)C1CCC=C(C2=CCCCCC2)CC1

nearest known ligand 0.32

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
PSMB5 P28074 1/20 0.32
JAK2 O60674 1/20 0.31
JAK3 P52333 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1585575 0.89 JAK2 (0.31) JAK2JAK3
SCHEMBL3166128 0.87 JAK2 (0.33) PSMB5JAK2JAK3
SCHEMBL3661359 0.85
SCHEMBL1584751 0.84 NPC1 (0.33) PSMB5
SCHEMBL2270492 0.80 ALDH1A1 (0.34) PSMB5
SCHEMBL1258428 0.78 NPC1 (0.33) PSMB5
SCHEMBL2101945 0.77 ALDH1A1 (0.33) PSMB5
SCHEMBL6432630 0.77 ALDH1A1 (0.33) PSMB5
SCHEMBL296847 0.75 JAK2 (0.34) PSMB5JAK2JAK3
SCHEMBL4325254 0.73 JAK2 (0.34) PSMB5JAK2JAK3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20130260575-A1 SILICON PRECURSORS AND COMPOSITIONS COMPRISING SAME FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-10-03 US claimed
WO-2011106218-A2 ULTRA LOW DIELECTRIC MATERIALS USING HYBRID PRECURSORS CONTAINING SILICON WITH ORGANIC FUNCTIONAL GROUPS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION APPLIED MATERIALS, INC. (US) 2011-09-01 WO claimed
US-20110206857-A1 ULTRA LOW DIELECTRIC MATERIALS USING HYBRID PRECURSORS CONTAINING SILICON WITH ORGANIC FUNCTIONAL GROUPS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION APPLIED MATERIALS, INC. (US) 2011-08-25 US claimed
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-20130260575-A1 SILICON PRECURSORS AND COMPOSITIONS COMPRISING SAME FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-10-03 US disclosed
WO-2011106218-A2 ULTRA LOW DIELECTRIC MATERIALS USING HYBRID PRECURSORS CONTAINING SILICON WITH ORGANIC FUNCTIONAL GROUPS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION APPLIED MATERIALS, INC. (US) 2011-09-01 WO disclosed
US-20110206857-A1 ULTRA LOW DIELECTRIC MATERIALS USING HYBRID PRECURSORS CONTAINING SILICON WITH ORGANIC FUNCTIONAL GROUPS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION APPLIED MATERIALS, INC. (US) 2011-08-25 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed