SCHEMBL12753597

SCHEMBL12753597

O=C1OC2C(O)C3CC1(C(F)(F)F)C2O3

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25701252 0.83 — —
SCHEMBL12829187 0.75 PPARG (0.31) —
SCHEMBL12832727 0.75 — —
SCHEMBL11989123 0.73 MGAM (0.31) —
SCHEMBL12829184 0.71 — —
SCHEMBL12753599 0.71 HMGCR (0.33) —
SCHEMBL25701939 0.70 — —
SCHEMBL12829191 0.68 — —
SCHEMBL6414821 0.68 — —
SCHEMBL25701231 0.61 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9023576-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2015-05-05 — — US disclosed
US-9023576-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2015-05-05 — — US disclosed
US-20110076622-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-03-31 — — US disclosed
US-7906268-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2011-03-15 — — US disclosed
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